DIODES Incorporated Bipolar Transistor ZXT13P40DE6QTA

Description
PWR LOW SAT TRANSISTOR SOT26 T&R Product overview: ZXT13P40DE6QTA from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-ZXT13P40DE6QTA can be used for catalog matching and distributor lookup.
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors - 1380343-ZXT13P40DE6QTA - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - ZXT13P40DE6QTA - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
PWR LOW SAT TRANSISTOR SOT26 T&R Product overview: ZXT13P40DE6QTA from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-ZXT13P40DE6QTA can be used for catalog matching and distributor lookup.
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Datasheet
Datasheet Summary
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The 1380343-ZXT13P40DE6QTA is a PNP bipolar junction transistor (BJT) designed for automotive applications, compliant with AEC-Q101 standards. It features a maximum collector-emitter voltage (VCEO) of -40V and can handle a continuous collector current (IC) of up to -3A, with a peak pulse current (ICM) capability of -10A. The transistor exhibits a low saturation voltage of -200mV at 1A and a low equivalent on-resistance (RCE(SAT)) of 58m,Ѷ, which contributes to efficient performance in switching applications. This device is housed in a SOT-26 package, making it suitable for surface mount applications. It is fully lead-free and RoHS compliant, ensuring it meets environmental standards. The operating temperature range is from -55°C to +150°C, providing versatility for various applications. The transistor also has a high DC current gain (hFE) characterized up to -5A, making it effective for high current gain hold-up in circuits. Engineers considering this product should note its robust specifications and compliance with automotive standards, making it a reliable choice for automotive and other high-reliability applications.

Datasheet Summary
Powered by GS/AI

The 1380343-ZXT13P40DE6QTA is a PNP bipolar junction transistor (BJT) designed for automotive applications, compliant with AEC-Q101 standards. It features a maximum collector-emitter voltage (VCEO) of -40V and can handle a continuous collector current (IC) of up to -3A, with a peak pulse current (ICM) capability of -10A. The transistor exhibits a low saturation voltage of -200mV at 1A and a low equivalent on-resistance (RCE(SAT)) of 58m,Ѷ, which contributes to efficient performance in switching applications. This device is housed in a SOT-26 package, making it suitable for surface mount applications. It is fully lead-free and RoHS compliant, ensuring it meets environmental standards. The operating temperature range is from -55°C to +150°C, providing versatility for various applications. The transistor also has a high DC current gain (hFE) characterized up to -5A, making it effective for high current gain hold-up in circuits. Engineers considering this product should note its robust specifications and compliance with automotive standards, making it a reliable choice for automotive and other high-reliability applications.

Suppliers

Company
Product
Description
Supplier Links
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Bipolar Transistor
276-ZXT13P40DE6QTA
Bipolar Transistor 276-ZXT13P40DE6QTA
PWR LOW SAT TRANSISTOR SOT26 T&R Product overview: ZXT13P40DE6QTA from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-ZXT13P40DE6QTA can be used for catalog matching and distributor lookup.

PWR LOW SAT TRANSISTOR SOT26 T&R Product overview: ZXT13P40DE6QTA from Diodes Incorporated is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-ZXT13P40DE6QTA can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors - 1380343-ZXT13P40DE6QTA - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
1380343-ZXT13P40DE6QTA
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors 1380343-ZXT13P40DE6QTA
Win Source Part Number: 1380343-ZXT13P40DE6Q TA Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Package: Tape & Reel Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 37 pct. REACH Status: REACH Unaffected Mfr: Diodes Incorporated Series: Automotive, AEC-Q101 Product Status: Active Package / Case: SOT-23-6 Supplier Device Package: SOT-26 Mounting Type: Surface Mount HTSUS: 8541.29.0075 ECCN: EAR99 Transistor Type: PNP Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 40 V DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V Vce Saturation (Max) @ Ib, Ic: 240mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA Frequency - Transition: 115MHz Power - Max: 1.1 W

Win Source Part Number: 1380343-ZXT13P40DE6QTA
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Package: Tape & Reel
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 37 pct.
REACH Status: REACH Unaffected
Mfr: Diodes Incorporated
Series: Automotive, AEC-Q101
Product Status: Active
Package / Case: SOT-23-6
Supplier Device Package: SOT-26
Mounting Type: Surface Mount
HTSUS: 8541.29.0075
ECCN: EAR99
Transistor Type: PNP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1A, 2V
Vce Saturation (Max) @ Ib, Ic: 240mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
Frequency - Transition: 115MHz
Power - Max: 1.1 W

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - ZXT13P40DE6QTA - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
ZXT13P40DE6QTA
Discrete Semiconductor Products - Transistors - Bipolar (BJT) ZXT13P40DE6QTA
PWR LOW SAT TRANSISTOR SOT26 T&R

PWR LOW SAT TRANSISTOR SOT26 T&R

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors RF Transistors Bipolar RF Transistors
Product Number 276-ZXT13P40DE6QTA 1380343-ZXT13P40DE6QTA ZXT13P40DE6QTA
Product Name Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Package Type Tape & Reel (TR) SOT3; SOT26 AEC-Q101
Packing Method Tape & Reel (TR) Tape Reel; Tape & Reel (TR)
VCEO 40 volts 40 volts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Polarity PNP
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