DIODES Incorporated Single Bipolar Transistors ZXT10P12DE6TA

Description
Bipolar (BJT) Transistor PNP 12V 3A 110MHz 1.1W Surface Mount SOT-23-6
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor PNP 12V 3A 110MHz 1.1W Surface Mount SOT-23-6
Request a Quote Datasheet

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Product
Description
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Single Bipolar Transistors - 31-ZXT10P12DE6TATR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
31-ZXT10P12DE6TATR-ND
Single Bipolar Transistors 31-ZXT10P12DE6TATR-ND
Bipolar (BJT) Transistor PNP 12V 3A 110MHz 1.1W Surface Mount SOT-23-6

Bipolar (BJT) Transistor PNP 12V 3A 110MHz 1.1W Surface Mount SOT-23-6

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Single Bipolar Transistors - 31-ZXT10P12DE6TACT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
31-ZXT10P12DE6TACT-ND
Single Bipolar Transistors 31-ZXT10P12DE6TACT-ND
TRANS PNP 12V 3A SOT-23-6

TRANS PNP 12V 3A SOT-23-6

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TRANSISTORS - Transistors (BJT) - Single - ZXT10P12DE6TA - 004855-ZXT10P12DE6TA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - ZXT10P12DE6TA
004855-ZXT10P12DE6TA
TRANSISTORS - Transistors (BJT) - Single - ZXT10P12DE6TA 004855-ZXT10P12DE6TA
Manufacturer: Diodes Incorporated Win Source Part Number: 004855-ZXT10P12DE6TA Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 110MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-6 Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 12V Max Vce (sat): 300mV @ 50mA, 3A Collector Cut-off Current(Max): 100nA Typical Gain (hFE) (Min): 300 @ 100mA, 2V Maximum Power Dissipation: 1.1W Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Sufficient

Manufacturer: Diodes Incorporated
Win Source Part Number: 004855-ZXT10P12DE6TA
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 110MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-6
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Max Vce (sat): 300mV @ 50mA, 3A
Collector Cut-off Current(Max): 100nA
Typical Gain (hFE) (Min): 300 @ 100mA, 2V
Maximum Power Dissipation: 1.1W
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Sufficient

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
ZXT10P12DE6TA
Bipolar Transistors - BJT ZXT10P12DE6TA
Bipolar Transistors - BJT 12V PNP SuperSOT4

Bipolar Transistors - BJT 12V PNP SuperSOT4

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - ZXT10P12DE6TA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
ZXT10P12DE6TA
Discrete Semiconductor Products - Transistors - Bipolar (BJT) ZXT10P12DE6TA
TRANS PNP 12V 3A SOT23-6

TRANS PNP 12V 3A SOT23-6

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Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 31-ZXT10P12DE6TATR-ND 004855-ZXT10P12DE6TA ZXT10P12DE6TA ZXT10P12DE6TA
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - ZXT10P12DE6TA Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP; PNP
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