Manufacturer: Diodes Incorporated
Win Source Part Number: 037005-ZXMP6A18DN8TA
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOP
Maximum Power Dissipation: 1.8W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 3.7A
Gate-Source Threshold Voltage: 1V @ 250μA (Min)
Max Gate Charge: 44nC @ 10V
Max Input Capacitance: 1580pF @ 30V
Maximum Rds On at Id,Vgs: 55 mOhm @ 3.5A, 10V
Alternative Parts (Cross-Reference): SI7949DP-T1-E3; TSM680P06DPQ56 RLG; ZXMP6A18DN8TC; ZXMP6A18DN8TA;
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Mosfet Array 2 P-Channel (Dual) 60V 3.7A 1.8W Surface Mount 8-SO
Mosfet Array 2 P-Channel (Dual) 60V 3.7A 1.8W Surface Mount 8-SO
Mosfet Array 2 P-Channel (Dual) 60V 3.7A 1.8W Surface Mount 8-SO
MOSFET 2P-CH 60V 3.7A 8SO Product overview: ZXMP6A18DN8TA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 3.7A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-ZXMP6A18DN8TA can be used for catalog matching and distributor lookup.
MOSFET 2P-CH 60V 3.7A 8-SOIC
MOSFET 2P-CH 60V 3.7A 8SO
MOSFET, PP CHANNEL, 60V, 4.8A, SO8; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:3.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
POWER FIELD-EFFECT TRANSISTOR, 4.4A I(D), 60V, 0.08OHM, 2-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOIC-8. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Radwell International | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 037005-ZXMP6A18DN8TA | ZXMP6A18DN8DKR-ND | 289-ZXMP6A18DN8TA | ZXMP6A18DN8TA | ZXMP6A18DN8TA | ZXMP6A18DN8TA | 65T9559 | 38443622 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMP6A18DN8TA | FET, MOSFET Arrays | 60V 3.7A MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, Pp Channel, 60V, 4.8A, So8; Channel Type Diodes Inc. | Transistor |
| Polarity | P-Channel | P-Channel | P-Channel; 2 P-Channel (Dual) | P-Channel | ||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | |||||
| PD | 1800 milliwatts | 2.1 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; 8-SOP | "8-SOIC (0.154"", 3.90mm Width)" | Tape & Reel (TR) | 8-SOIC (0.154", 3.90mm Width) | TO-3 |
