DIODES Incorporated Single FETs, MOSFETs ZXMP6A17N8TC

Description
P-Channel 60V 2.7A (Ta) 1.56W (Ta) Surface Mount 8-SO
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Description
P-Channel 60V 2.7A (Ta) 1.56W (Ta) Surface Mount 8-SO
Request a Quote Datasheet

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Single FETs, MOSFETs - ZXMP6A17N8TCTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZXMP6A17N8TCTR-ND
Single FETs, MOSFETs ZXMP6A17N8TCTR-ND
P-Channel 60V 2.7A (Ta) 1.56W (Ta) Surface Mount 8-SO

P-Channel 60V 2.7A (Ta) 1.56W (Ta) Surface Mount 8-SO

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMP6A17N8TC - 037004-ZXMP6A17N8TC - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMP6A17N8TC
037004-ZXMP6A17N8TC
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMP6A17N8TC 037004-ZXMP6A17N8TC
Manufacturer: Diodes Incorporated Win Source Part Number: 037004-ZXMP6A17N8TC Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.56W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 2.7A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 17.7nC @ 10V Max Input Capacitance: 637pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 125 mOhm @ 2.3A, 10V Alternative Parts (Cross-Reference): SI9407BDY-T1-GE3; ZXMP6A17N8; BSO613SPV G; Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance Application Field: Used in Power Management

Manufacturer: Diodes Incorporated
Win Source Part Number: 037004-ZXMP6A17N8TC
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.56W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 2.7A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 17.7nC @ 10V
Max Input Capacitance: 637pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 125 mOhm @ 2.3A, 10V
Alternative Parts (Cross-Reference): SI9407BDY-T1-GE3; ZXMP6A17N8; BSO613SPV G;
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZXMP6A17N8TC - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ZXMP6A17N8TC
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ZXMP6A17N8TC
MOSFET P-CH 60V 2.7A 8SO

MOSFET P-CH 60V 2.7A 8SO

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number ZXMP6A17N8TCTR-ND 037004-ZXMP6A17N8TC ZXMP6A17N8TC
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMP6A17N8TC Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO 8-SOIC (0.154, 3.90mm Width)
V(BR)DSS 60 volts
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