DIODES Incorporated Single FETs, MOSFETs ZXMP4A57E6QTA

MOSFET BVDSS: 31V~40V SOT26 T&R

MOSFET BVDSS: 31V~40V SOT26 T&R

MOSFET BVDSS: 31V~40V SOT26 T&R

MOSFET BVDSS: 31V~40V SOT26 T&R Product overview: ZXMP4A57E6QTA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 31V, 40V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 31V, 40V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMP4A57E6QTA can be used for catalog matching and distributor lookup.

Win Source Part Number: 963646-ZXMP4A57E6QTA
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Automotive, AEC-Q101
Package: Tape & Reel (TR)
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Package / Case: SOT-23-6
Supplier Device Package: SOT-26
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 833 pF @ 20 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 79 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Diodes Incorporated
Other Names: 31-ZXMP4A57E6QTATR
Base Product Number: ZXMP4A57
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V