DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMP3F35N8 ZXMP3F35N8

Manufacturer: Diodes Incorporated Win Source Part Number: 057863-ZXMP3F35N8 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.56W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9.3A (Ta) Gate-Source Threshold Voltage: 2.6V @ 250μA Max Gate Charge: 77.1nC @ 10V Max Input Capacitance: 4600pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 12 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Limited