DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMNS3BM832TA ZXMNS3BM832TA

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 800447-ZXMNS3BM832TA Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-VDFN Exposed Pad Mounting: SMD Technology: MOSFET FET Feature: Schottky Diode (Isolated) Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Part Status: Obsolete(EOL) Family Name: ZXMNS3BM832 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Manufacturer Package: 8-MLP, MicroFET (3x2) Channel Type Type: N Drain Source Voltage: 30V Vgs(th) (Maximum) @ Id: 700mV @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 2.9nC @ 4.5V Input Capacitance (Ciss) (Maximum) @ Vds: 314pF @ 15V Vgs (Maximum): ±12V Power Dissipation (Maximum): 1W (Ta) Rds On (Maximum) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V Alternative Parts (Cross-Reference): SCH2819; ZXMNS3BM832TC ; Introduction Date: April 04, 2005 ECCN: EAR99 Estimated EOL Date: Not Applicable Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 800447-ZXMNS3BM832TA Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-VDFN Exposed Pad Mounting: SMD Technology: MOSFET FET Feature: Schottky Diode (Isolated) Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Part Status: Obsolete(EOL) Family Name: ZXMNS3BM832 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Manufacturer Package: 8-MLP, MicroFET (3x2) Channel Type Type: N Drain Source Voltage: 30V Vgs(th) (Maximum) @ Id: 700mV @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 2.9nC @ 4.5V Input Capacitance (Ciss) (Maximum) @ Vds: 314pF @ 15V Vgs (Maximum): ±12V Power Dissipation (Maximum): 1W (Ta) Rds On (Maximum) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V Alternative Parts (Cross-Reference): SCH2819; ZXMNS3BM832TC ; Introduction Date: April 04, 2005 ECCN: EAR99 Estimated EOL Date: Not Applicable Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMNS3BM832TA - 800447-ZXMNS3BM832TA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMNS3BM832TA
800447-ZXMNS3BM832TA
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMNS3BM832TA 800447-ZXMNS3BM832TA
Manufacturer: Diodes Incorporated Win Source Part Number: 800447-ZXMNS3BM832TA Packaging: Reel package Operating Temperature Range: -55°C ~ 150°C (TJ) Package: 8-VDFN Exposed Pad Mounting: SMD Technology: MOSFET FET Feature: Schottky Diode (Isolated) Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Part Status: Obsolete(EOL) Family Name: ZXMNS3BM832 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Manufacturer Package: 8-MLP, MicroFET (3x2) Channel Type Type: N Drain Source Voltage: 30V Vgs(th) (Maximum) @ Id: 700mV @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 2.9nC @ 4.5V Input Capacitance (Ciss) (Maximum) @ Vds: 314pF @ 15V Vgs (Maximum): ±12V Power Dissipation (Maximum): 1W (Ta) Rds On (Maximum) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V Alternative Parts (Cross-Reference): SCH2819; ZXMNS3BM832TC ; Introduction Date: April 04, 2005 ECCN: EAR99 Estimated EOL Date: Not Applicable Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited

Manufacturer: Diodes Incorporated
Win Source Part Number: 800447-ZXMNS3BM832TA
Packaging: Reel package
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: 8-VDFN Exposed Pad
Mounting: SMD
Technology: MOSFET
FET Feature: Schottky Diode (Isolated)
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Part Status: Obsolete(EOL)
Family Name: ZXMNS3BM832
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Manufacturer Package: 8-MLP, MicroFET (3x2)
Channel Type Type: N
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 700mV @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 2.9nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds: 314pF @ 15V
Vgs (Maximum): ±12V
Power Dissipation (Maximum): 1W (Ta)
Rds On (Maximum) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V
Alternative Parts (Cross-Reference): SCH2819; ZXMNS3BM832TC ;
Introduction Date: April 04, 2005
ECCN: EAR99
Estimated EOL Date: Not Applicable
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - ZXMNS3BM832TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
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N-Channel 30V 2A (Ta) 1W (Ta) Surface Mount 8-MLP (3x2)

N-Channel 30V 2A (Ta) 1W (Ta) Surface Mount 8-MLP (3x2)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZXMNS3BM832TA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ZXMNS3BM832TA
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ZXMNS3BM832TA
MOSFET N-CH 30V 2A 8MLP

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 800447-ZXMNS3BM832TA ZXMNS3BM832TR-ND ZXMNS3BM832TA
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMNS3BM832TA Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PD 1000 milliwatts
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