MOSFET N-CH 70V 2.7A SOT223 Product overview: ZXMN7A11GTA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 70V, 2.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 70V, 2.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN7A11GTA can be used for catalog matching and distributor lookup.
N-Channel 70V 2.7A (Ta) 2W (Ta) Surface Mount SOT-223-3
N-Channel 70V 2.7A (Ta) 2W (Ta) Surface Mount SOT-223-3
N-Channel 70V 2.7A (Ta) 2W (Ta) Surface Mount SOT-223-3
Manufacturer: Diodes Incorporated
Win Source Part Number: 036985-ZXMN7A11GTA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 70V
Continuous Drain Current at 25°C: 2.7A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 7.4nC @ 10V
Max Input Capacitance: 298pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 130 mOhm @ 4.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
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| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-ZXMN7A11GTA | ZXMN7A11GTR-ND | 036985-ZXMN7A11GTA | ZXMN7A11GTA | ZXMN7A11GTA | ZXMN7A11GTA |
| Product Name | 70V 2.7A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN7A11GTA | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 70 volts | 70 volts | 70 volts | |||
| PD | 3.9 milliwatts | 2000 milliwatts | 2000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
