DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A25N8TA ZXMN6A25N8TA

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 057861-ZXMN6A25N8TA Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.56W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 4.3A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 20.4nC @ 10V Max Input Capacitance: 1063pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 50 mOhm @ 3.6A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 057861-ZXMN6A25N8TA Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.56W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 4.3A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 20.4nC @ 10V Max Input Capacitance: 1063pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 50 mOhm @ 3.6A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Sufficient
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Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A25N8TA - 057861-ZXMN6A25N8TA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A25N8TA
057861-ZXMN6A25N8TA
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A25N8TA 057861-ZXMN6A25N8TA
Manufacturer: Diodes Incorporated Win Source Part Number: 057861-ZXMN6A25N8TA Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.56W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 4.3A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 20.4nC @ 10V Max Input Capacitance: 1063pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 50 mOhm @ 3.6A, 10V Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Sufficient

Manufacturer: Diodes Incorporated
Win Source Part Number: 057861-ZXMN6A25N8TA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.56W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 4.3A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20.4nC @ 10V
Max Input Capacitance: 1063pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 50 mOhm @ 3.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - ZXMN6A25N8TADI-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZXMN6A25N8TADI-ND
Single FETs, MOSFETs ZXMN6A25N8TADI-ND
N-Channel 60V 4.3A (Ta) 1.56W (Ta) Surface Mount 8-SO

N-Channel 60V 4.3A (Ta) 1.56W (Ta) Surface Mount 8-SO

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZXMN6A25N8TA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ZXMN6A25N8TA
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ZXMN6A25N8TA
MOSFET N-CH 60V 4.3A 8SO

MOSFET N-CH 60V 4.3A 8SO

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-CHANNEL 60V

MOSFET N-CHANNEL 60V

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 057861-ZXMN6A25N8TA ZXMN6A25N8TADI-ND ZXMN6A25N8TA ZXMN6A25N8TA
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A25N8TA Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 60 volts
PD 1560 milliwatts
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