DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A25N8TA ZXMN6A25N8TA

Manufacturer: Diodes Incorporated
Win Source Part Number: 057861-ZXMN6A25N8TA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.56W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 4.3A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 20.4nC @ 10V
Max Input Capacitance: 1063pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 50 mOhm @ 3.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Sufficient

MOSFET N-CH 60V 4.3A 8SO Product overview: ZXMN6A25N8TA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 4.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 4.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN6A25N8TA can be used for catalog matching and distributor lookup.

N-Channel 60V 4.3A (Ta) 1.56W (Ta) Surface Mount 8-SO