DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A25GTA ZXMN6A25GTA

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 036983-ZXMN6A25GTA Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 4.8A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 20.4nC @ 10V Max Input Capacitance: 1063pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 50 mOhm @ 3.6A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 036983-ZXMN6A25GTA Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 4.8A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 20.4nC @ 10V Max Input Capacitance: 1063pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 50 mOhm @ 3.6A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A25GTA - 036983-ZXMN6A25GTA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A25GTA
036983-ZXMN6A25GTA
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A25GTA 036983-ZXMN6A25GTA
Manufacturer: Diodes Incorporated Win Source Part Number: 036983-ZXMN6A25GTA Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 4.8A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 20.4nC @ 10V Max Input Capacitance: 1063pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 50 mOhm @ 3.6A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 036983-ZXMN6A25GTA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 4.8A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 20.4nC @ 10V
Max Input Capacitance: 1063pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 50 mOhm @ 3.6A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - ZXMN6A25GTA - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
ZXMN6A25GTA
Single FETs, MOSFETs ZXMN6A25GTA
MOSFET N-CH 60V 4.8A SOT223

MOSFET N-CH 60V 4.8A SOT223

Supplier's Site
Single FETs, MOSFETs - ZXMN6A25GTADKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZXMN6A25GTADKR-ND
Single FETs, MOSFETs ZXMN6A25GTADKR-ND
N-Channel 60V 4.8A (Ta) 2W (Ta) Surface Mount SOT-223-3

N-Channel 60V 4.8A (Ta) 2W (Ta) Surface Mount SOT-223-3

Buy Now Datasheet
Single FETs, MOSFETs - ZXMN6A25GTATR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZXMN6A25GTATR-ND
Single FETs, MOSFETs ZXMN6A25GTATR-ND
N-Channel 60V 4.8A (Ta) 2W (Ta) Surface Mount SOT-223-3

N-Channel 60V 4.8A (Ta) 2W (Ta) Surface Mount SOT-223-3

Buy Now Datasheet
Single FETs, MOSFETs - ZXMN6A25GTACT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZXMN6A25GTACT-ND
Single FETs, MOSFETs ZXMN6A25GTACT-ND
N-Channel 60V 4.8A (Ta) 2W (Ta) Surface Mount SOT-223-3

N-Channel 60V 4.8A (Ta) 2W (Ta) Surface Mount SOT-223-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZXMN6A25GTA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ZXMN6A25GTA
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ZXMN6A25GTA
MOSFET N-CH 60V 4.8A SOT223

MOSFET N-CH 60V 4.8A SOT223

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Chan 60V MOSFET (UMOS)

MOSFET N-Chan 60V MOSFET (UMOS)

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 036983-ZXMN6A25GTA ZXMN6A25GTA ZXMN6A25GTADKR-ND ZXMN6A25GTA ZXMN6A25GTA
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A25GTA Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 60 volts 60 volts
PD 2000 milliwatts 2000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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