MOSFET 2N-CH 60V 3.8A 8SO Product overview: ZXMN6A25DN8TA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 3.8A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-ZXMN6A25DN8TA can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 60V 3.8A 1.8W Surface Mount 8-SO
Mosfet Array 2 N-Channel (Dual) 60V 3.8A 1.8W Surface Mount 8-SO
Mosfet Array 2 N-Channel (Dual) 60V 3.8A 1.8W Surface Mount 8-SO
Manufacturer: Diodes Incorporated
Win Source Part Number: 036982-ZXMN6A25DN8TA
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOP
Maximum Power Dissipation: 1.8W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 3.8A
Gate-Source Threshold Voltage: 1V @ 250μA (Min)
Max Gate Charge: 20.4nC @ 10V
Max Input Capacitance: 1063pF @ 30V
Maximum Rds On at Id,Vgs: 50 mOhm @ 3.6A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Limited
MOSFET 2N-CH 60V 3.8A 8-SOIC
MOSFET 2N-CH 60V 3.8A 8-SOIC
MOSFET 2N-CH 60V 3.8A 8SO
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 289-ZXMN6A25DN8TA | ZXMN6A25DN8DKR-ND | 036982-ZXMN6A25DN8TA | ZXMN6A25DN8TA | ZXMN6A25DN8TA | 233-ZXMN6A25DN8TA | ZXMN6A25DN8TA |
| Product Name | 60V 3.8A MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A25DN8TA | FET, MOSFET Arrays | MOSFET | MOSFET 2N-CH 60V 3.8A 8-SOIC | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | ||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | |||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | 60 volts | |||
| PD | 2.1 milliwatts | 1800 milliwatts | 2100 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
