DIODES Incorporated 60V 3.1A MOSFET Transistor ZXMN6A11GTA

Description
MOSFET N-CH 60V 3.1A SOT223 Product overview: ZXMN6A11GTA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 3.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN6A11GTA can be used for catalog matching and distributor lookup.
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Description
MOSFET N-CH 60V 3.1A SOT223 Product overview: ZXMN6A11GTA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 3.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN6A11GTA can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
60V 3.1A MOSFET Transistor
278-ZXMN6A11GTA
60V 3.1A MOSFET Transistor 278-ZXMN6A11GTA
MOSFET N-CH 60V 3.1A SOT223 Product overview: ZXMN6A11GTA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 3.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN6A11GTA can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 3.1A SOT223 Product overview: ZXMN6A11GTA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 3.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN6A11GTA can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A11GTA - 036980-ZXMN6A11GTA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A11GTA
036980-ZXMN6A11GTA
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A11GTA 036980-ZXMN6A11GTA
Manufacturer: Diodes Incorporated Win Source Part Number: 036980-ZXMN6A11GTA Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 3.1A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 5.7nC @ 10V Max Input Capacitance: 330pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 120 mOhm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Sufficient

Manufacturer: Diodes Incorporated
Win Source Part Number: 036980-ZXMN6A11GTA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 3.1A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 5.7nC @ 10V
Max Input Capacitance: 330pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 120 mOhm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - ZXMN6A11GTA - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
ZXMN6A11GTA
Single FETs, MOSFETs ZXMN6A11GTA
MOSFET N-CH 60V 3.1A SOT223

MOSFET N-CH 60V 3.1A SOT223

Supplier's Site Datasheet
Single FETs, MOSFETs - ZXMN6A11GTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZXMN6A11GTR-ND
Single FETs, MOSFETs ZXMN6A11GTR-ND
N-Channel 60V 3.1A (Ta) 2W (Ta) Surface Mount SOT-223-3

N-Channel 60V 3.1A (Ta) 2W (Ta) Surface Mount SOT-223-3

Buy Now Datasheet
Single FETs, MOSFETs - ZXMN6A11GCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZXMN6A11GCT-ND
Single FETs, MOSFETs ZXMN6A11GCT-ND
N-Channel 60V 3.1A (Ta) 2W (Ta) Surface Mount SOT-223-3

N-Channel 60V 3.1A (Ta) 2W (Ta) Surface Mount SOT-223-3

Buy Now Datasheet
Single FETs, MOSFETs - ZXMN6A11GDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZXMN6A11GDKR-ND
Single FETs, MOSFETs ZXMN6A11GDKR-ND
N-Channel 60V 3.1A (Ta) 2W (Ta) Surface Mount SOT-223-3

N-Channel 60V 3.1A (Ta) 2W (Ta) Surface Mount SOT-223-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZXMN6A11GTA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ZXMN6A11GTA
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ZXMN6A11GTA
MOSFET N-CH 60V 3.1A SOT223

MOSFET N-CH 60V 3.1A SOT223

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 60V N-Chnl UMOS

MOSFET 60V N-Chnl UMOS

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 278-ZXMN6A11GTA 036980-ZXMN6A11GTA ZXMN6A11GTA ZXMN6A11GTR-ND ZXMN6A11GTA ZXMN6A11GTA
Product Name 60V 3.1A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A11GTA Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 60 volts 60 volts 60 volts
Transconductance 0.0049 kS
PD 3.9 milliwatts 2000 milliwatts 2000 milliwatts
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