DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A11GTA ZXMN6A11GTA

Manufacturer: Diodes Incorporated
Win Source Part Number: 036980-ZXMN6A11GTA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 3.1A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 5.7nC @ 10V
Max Input Capacitance: 330pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 120 mOhm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Sufficient

MOSFET N-CH 60V 3.1A SOT223

MOSFET N-CH 60V 3.1A SOT223 Product overview: ZXMN6A11GTA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 3.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN6A11GTA can be used for catalog matching and distributor lookup.

N-Channel 60V 3.1A (Ta) 2W (Ta) Surface Mount SOT-223-3

N-Channel 60V 3.1A (Ta) 2W (Ta) Surface Mount SOT-223-3

N-Channel 60V 3.1A (Ta) 2W (Ta) Surface Mount SOT-223-3