DIODES Incorporated Mosfet, N Channel, 60V, 4.4A, Sot-223; Channel Type Diodes Inc. ZXMN6A11G

Description
MOSFET, N CHANNEL, 60V, 4.4A, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
Description
MOSFET, N CHANNEL, 60V, 4.4A, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
Datasheet
Datasheet Summary
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The ZXMN6A11G is a 60V N-channel enhancement mode MOSFET in an SOT223 package, designed for high-efficiency power management applications such as DC-DC converters and motor control. It has a maximum continuous drain current of 4.4A at 25°C with a drain-source on-resistance of 120mΩ at VGS=10V and 180mΩ at VGS=4.5V. The device features a gate threshold voltage range of 1.0V to 3.0V, a thermal resistance junction-to-ambient of 62.5°C/W, and operates from -55°C to +150°C. It is RoHS compliant, halogen and antimony free, qualified to AEC-Q101 standards, and meets UL 94 V-0 flammability rating. The package dimensions are 6.50mm x 3.50mm x 1.60mm, with a weight of approximately 0.112 grams.

Datasheet Summary
Powered by GS/AI

The ZXMN6A11G is a 60V N-channel enhancement mode MOSFET in an SOT223 package, designed for high-efficiency power management applications such as DC-DC converters and motor control. It has a maximum continuous drain current of 4.4A at 25°C with a drain-source on-resistance of 120mΩ at VGS=10V and 180mΩ at VGS=4.5V. The device features a gate threshold voltage range of 1.0V to 3.0V, a thermal resistance junction-to-ambient of 62.5°C/W, and operates from -55°C to +150°C. It is RoHS compliant, halogen and antimony free, qualified to AEC-Q101 standards, and meets UL 94 V-0 flammability rating. The package dimensions are 6.50mm x 3.50mm x 1.60mm, with a weight of approximately 0.112 grams.

Suppliers

Company
Product
Description
Supplier Links
Mosfet, N Channel, 60V, 4.4A, Sot-223; Channel Type Diodes Inc. - 98K4136 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 60V, 4.4A, Sot-223; Channel Type Diodes Inc.
98K4136
Mosfet, N Channel, 60V, 4.4A, Sot-223; Channel Type Diodes Inc. 98K4136
MOSFET, N CHANNEL, 60V, 4.4A, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

MOSFET, N CHANNEL, 60V, 4.4A, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 98K4136
Product Name Mosfet, N Channel, 60V, 4.4A, Sot-223; Channel Type Diodes Inc.
Polarity N-Channel
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