The ZXMN6A11G is a 60V N-channel enhancement mode MOSFET in an SOT223 package, designed for high-efficiency power management applications such as DC-DC converters and motor control. It has a maximum continuous drain current of 4.4A at 25°C with a drain-source on-resistance of 120mΩ at VGS=10V and 180mΩ at VGS=4.5V. The device features a gate threshold voltage range of 1.0V to 3.0V, a thermal resistance junction-to-ambient of 62.5°C/W, and operates from -55°C to +150°C. It is RoHS compliant, halogen and antimony free, qualified to AEC-Q101 standards, and meets UL 94 V-0 flammability rating. The package dimensions are 6.50mm x 3.50mm x 1.60mm, with a weight of approximately 0.112 grams.
MOSFET, N CHANNEL, 60V, 4.4A, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:4.4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 98K4136 |
| Product Name | Mosfet, N Channel, 60V, 4.4A, Sot-223; Channel Type Diodes Inc. |
| Polarity | N-Channel |