Mosfet Array 2 N-Channel (Dual) 60V 2.5A 1.8W Surface Mount 8-SO
Mosfet Array 2 N-Channel (Dual) 60V 2.5A 1.8W Surface Mount 8-SO
Manufacturer: Diodes Incorporated
Win Source Part Number: 036979-ZXMN6A11DN8TA
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOP
Maximum Power Dissipation: 1.8W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 2.5A
Gate-Source Threshold Voltage: 1V @ 250μA (Min)
Max Gate Charge: 5.7nC @ 10V
Max Input Capacitance: 330pF @ 40V
Maximum Rds On at Id,Vgs: 120 mOhm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Sufficient
MOSFET 2N-CH 60V 2.5A 8SO Product overview: ZXMN6A11DN8TA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 2.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 2.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-ZXMN6A11DN8TA can be used for catalog matching and distributor lookup.
MOSFET, N CHANNEL, DUAL, 60V, 3.2A, SOIC-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:3.2A; On Resistance Rds(on):0.18ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V RoHS Compliant: Yes
MOSFET 2N-CH 60V 2.5A 8SO
MOSFET 2N-CH 60V 2.5A 8-SOIC
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | ZXMN6A11DN8CT-ND | 036979-ZXMN6A11DN8TA | 289-ZXMN6A11DN8TA | ZXMN6A11DN8TA | 62M1304 | ZXMN6A11DN8TA | ZXMN6A11DN8TA |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A11DN8TA | 60V 2.5A MOSFET Transistor | MOSFET | Mosfet, N Channel, Dual, 60V, 3.2A, Soic-8; Transistor Polarity Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | FET, MOSFET Arrays |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | SOT3; 8-SOP | Tape & Reel (TR) | TO-3 | 8-SOIC (0.154", 3.90mm Width) | ||
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | |||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | ||||
| PD | 1800 milliwatts | 2.1 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
