DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A09GTA ZXMN6A09GTA

Manufacturer: Diodes Incorporated
Win Source Part Number: 092629-ZXMN6A09GTA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 5.4A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 24.2nC @ 5V
Max Input Capacitance: 1407pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 40 mOhm @ 8.2A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

N-Channel 60V 5.4A (Ta) 2W (Ta) Surface Mount SOT-223-3

N-Channel 60V 5.4A (Ta) 2W (Ta) Surface Mount SOT-223-3

MOSFET N-CH 60V 5.4A SOT223 Product overview: ZXMN6A09GTA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 5.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 5.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN6A09GTA can be used for catalog matching and distributor lookup.