DIODES Incorporated 60V 5.4A MOSFET Transistor ZXMN6A09GTA

Description
MOSFET N-CH 60V 5.4A SOT223 Product overview: ZXMN6A09GTA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 5.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 5.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN6A09GTA can be used for catalog matching and distributor lookup.
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Description
MOSFET N-CH 60V 5.4A SOT223 Product overview: ZXMN6A09GTA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 5.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 5.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN6A09GTA can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
60V 5.4A MOSFET Transistor
278-ZXMN6A09GTA
60V 5.4A MOSFET Transistor 278-ZXMN6A09GTA
MOSFET N-CH 60V 5.4A SOT223 Product overview: ZXMN6A09GTA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 5.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 5.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN6A09GTA can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 5.4A SOT223 Product overview: ZXMN6A09GTA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 5.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 5.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN6A09GTA can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A09GTA - 092629-ZXMN6A09GTA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A09GTA
092629-ZXMN6A09GTA
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A09GTA 092629-ZXMN6A09GTA
Manufacturer: Diodes Incorporated Win Source Part Number: 092629-ZXMN6A09GTA Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 5.4A (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 24.2nC @ 5V Max Input Capacitance: 1407pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 40 mOhm @ 8.2A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 092629-ZXMN6A09GTA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 5.4A (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 24.2nC @ 5V
Max Input Capacitance: 1407pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 40 mOhm @ 8.2A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - ZXMN6A09GCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZXMN6A09GCT-ND
Single FETs, MOSFETs ZXMN6A09GCT-ND
N-Channel 60V 5.4A (Ta) 2W (Ta) Surface Mount SOT-223-3

N-Channel 60V 5.4A (Ta) 2W (Ta) Surface Mount SOT-223-3

Buy Now Datasheet
Single FETs, MOSFETs - ZXMN6A09GTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZXMN6A09GTR-ND
Single FETs, MOSFETs ZXMN6A09GTR-ND
N-Channel 60V 5.4A (Ta) 2W (Ta) Surface Mount SOT-223-3

N-Channel 60V 5.4A (Ta) 2W (Ta) Surface Mount SOT-223-3

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 60V 7.5A

MOSFET N-Ch 60V 7.5A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZXMN6A09GTA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ZXMN6A09GTA
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ZXMN6A09GTA
MOSFET N-CH 60V 5.4A SOT223

MOSFET N-CH 60V 5.4A SOT223

Supplier's Site
N Channel Mosfet, 60V, 6.9A Sot-223; Channel Type Diodes Inc. - 38K9597 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 60V, 6.9A Sot-223; Channel Type Diodes Inc.
38K9597
N Channel Mosfet, 60V, 6.9A Sot-223; Channel Type Diodes Inc. 38K9597
N CHANNEL MOSFET, 60V, 6.9A SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:6.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

N CHANNEL MOSFET, 60V, 6.9A SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:6.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Supplier's Site
Single FETs, MOSFETs - ZXMN6A09GTA - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
ZXMN6A09GTA
Single FETs, MOSFETs ZXMN6A09GTA
MOSFET N-CH 60V 5.4A SOT223

MOSFET N-CH 60V 5.4A SOT223

Supplier's Site Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 278-ZXMN6A09GTA 092629-ZXMN6A09GTA ZXMN6A09GCT-ND ZXMN6A09GTA ZXMN6A09GTA 38K9597 ZXMN6A09GTA
Product Name 60V 5.4A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A09GTA Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 60V, 6.9A Sot-223; Channel Type Diodes Inc. Single FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 60 volts 60 volts 60 volts
Transconductance 1.50E-5 kS
PD 3.9 milliwatts 2000 milliwatts 2000 milliwatts
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