DIODES Incorporated FET, MOSFET Arrays ZXMN6A09DN8TA

Description
Mosfet Array 2 N-Channel (Dual) 60V 4.3A 1.25W Surface Mount 8-SO
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Dual) 60V 4.3A 1.25W Surface Mount 8-SO
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - ZXMN6A09DN8TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
ZXMN6A09DN8TR-ND
FET, MOSFET Arrays ZXMN6A09DN8TR-ND
Mosfet Array 2 N-Channel (Dual) 60V 4.3A 1.25W Surface Mount 8-SO

Mosfet Array 2 N-Channel (Dual) 60V 4.3A 1.25W Surface Mount 8-SO

Buy Now Datasheet
FET, MOSFET Arrays - ZXMN6A09DN8CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
ZXMN6A09DN8CT-ND
FET, MOSFET Arrays ZXMN6A09DN8CT-ND
Mosfet Array 2 N-Channel (Dual) 60V 4.3A 1.25W Surface Mount 8-SO

Mosfet Array 2 N-Channel (Dual) 60V 4.3A 1.25W Surface Mount 8-SO

Buy Now Datasheet
FET, MOSFET Arrays - ZXMN6A09DN8DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
ZXMN6A09DN8DKR-ND
FET, MOSFET Arrays ZXMN6A09DN8DKR-ND
Mosfet Array 2 N-Channel (Dual) 60V 4.3A 1.25W Surface Mount 8-SO

Mosfet Array 2 N-Channel (Dual) 60V 4.3A 1.25W Surface Mount 8-SO

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A09DN8TA - 108085-ZXMN6A09DN8TA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A09DN8TA
108085-ZXMN6A09DN8TA
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A09DN8TA 108085-ZXMN6A09DN8TA
Manufacturer: Diodes Incorporated Win Source Part Number: 108085-ZXMN6A09DN8TA Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Maximum Power Dissipation: 1.25W Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 4.3A Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 24.2nC @ 5V Max Input Capacitance: 1407pF @ 40V Maximum Rds On at Id,Vgs: 40 mOhm @ 8.2A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 108085-ZXMN6A09DN8TA
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.25W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 4.3A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 24.2nC @ 5V
Max Input Capacitance: 1407pF @ 40V
Maximum Rds On at Id,Vgs: 40 mOhm @ 8.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
60V 4.3A MOSFET Transistor
289-ZXMN6A09DN8TA
60V 4.3A MOSFET Transistor 289-ZXMN6A09DN8TA
MOSFET 2N-CH 60V 4.3A 8SO Product overview: ZXMN6A09DN8TA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 4.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 4.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-ZXMN6A09DN8TA can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 60V 4.3A 8SO Product overview: ZXMN6A09DN8TA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 4.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 4.3A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-ZXMN6A09DN8TA can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FET, MOSFET Arrays - ZXMN6A09DN8TA - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
ZXMN6A09DN8TA
FET, MOSFET Arrays ZXMN6A09DN8TA
MOSFET 2N-CH 60V 4.3A 8-SOIC

MOSFET 2N-CH 60V 4.3A 8-SOIC

Supplier's Site Datasheet
Mosfet, Dual, N-Ch, 60V, 5.6A Rohs Compliant Diodes Inc. - 29AK9179 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual, N-Ch, 60V, 5.6A Rohs Compliant Diodes Inc.
29AK9179
Mosfet, Dual, N-Ch, 60V, 5.6A Rohs Compliant Diodes Inc. 29AK9179
MOSFET, DUAL, N-CH, 60V, 5.6A ROHS COMPLIANT: YES

MOSFET, DUAL, N-CH, 60V, 5.6A ROHS COMPLIANT: YES

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZXMN6A09DN8TA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ZXMN6A09DN8TA
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ZXMN6A09DN8TA
MOSFET 2N-CH 60V 4.3A 8SO

MOSFET 2N-CH 60V 4.3A 8SO

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number ZXMN6A09DN8TR-ND 108085-ZXMN6A09DN8TA 289-ZXMN6A09DN8TA ZXMN6A09DN8TA 29AK9179 ZXMN6A09DN8TA
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A09DN8TA 60V 4.3A MOSFET Transistor FET, MOSFET Arrays Mosfet, Dual, N-Ch, 60V, 5.6A Rohs Compliant Diodes Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type "8-SOIC (0.154"", 3.90mm Width)" SOT3; 8-SO Tape & Reel (TR) 8-SOIC (0.154", 3.90mm Width) TO-3
Polarity N-Channel N-Channel N-Channel; 2 N-Channel (Dual)
V(BR)DSS 60 volts 60 volts 60 volts
PD 1250 milliwatts 2.1 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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