MOSFET 2N-CH 60V 4.3A 8-SOIC
Mosfet Array 2 N-Channel (Dual) 60V 4.3A 1.25W Surface Mount 8-SO
Mosfet Array 2 N-Channel (Dual) 60V 4.3A 1.25W Surface Mount 8-SO
Mosfet Array 2 N-Channel (Dual) 60V 4.3A 1.25W Surface Mount 8-SO
Manufacturer: Diodes Incorporated
Win Source Part Number: 108085-ZXMN6A09DN8TA
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.25W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 4.3A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 24.2nC @ 5V
Max Input Capacitance: 1407pF @ 40V
Maximum Rds On at Id,Vgs: 40 mOhm @ 8.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 60V 4.3A 8SO
MOSFET, DUAL, N-CH, 60V, 5.6A ROHS COMPLIANT: YES
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | ZXMN6A09DN8TA | ZXMN6A09DN8TR-ND | 108085-ZXMN6A09DN8TA | ZXMN6A09DN8TA | 29AK9179 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A09DN8TA | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual, N-Ch, 60V, 5.6A Rohs Compliant Diodes Inc. |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 60 volts | 60 volts | |||
| IDSS | 4300 milliamps |
