DIODES Incorporated Single FETs, MOSFETs ZXMN6A08E6TA

Description
MOSFET N-CH 60V 2.8A SOT26
Request a Quote Datasheet
Description
MOSFET N-CH 60V 2.8A SOT26
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - ZXMN6A08E6TA - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
ZXMN6A08E6TA
Single FETs, MOSFETs ZXMN6A08E6TA
MOSFET N-CH 60V 2.8A SOT26

MOSFET N-CH 60V 2.8A SOT26

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A08E6TA - 036975-ZXMN6A08E6TA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A08E6TA
036975-ZXMN6A08E6TA
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A08E6TA 036975-ZXMN6A08E6TA
Manufacturer: Diodes Incorporated Win Source Part Number: 036975-ZXMN6A08E6TA Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.1W (Ta) Family Name: ZXMN6A08E6 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-26 Dimension: SOT-23-6 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 2.8A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 5.8nC @ 10V Max Input Capacitance: 459pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 80 mOhm @ 4.8A, 10V Alternative Parts (Cross-Reference): CPH6444-TL-E; CPH6444-TL-W; Si3458BDV-T1-E3; Introduction Date: April 02, 2002 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2025 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Sufficient

Manufacturer: Diodes Incorporated
Win Source Part Number: 036975-ZXMN6A08E6TA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.1W (Ta)
Family Name: ZXMN6A08E6
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-26
Dimension: SOT-23-6
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 2.8A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 5.8nC @ 10V
Max Input Capacitance: 459pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 80 mOhm @ 4.8A, 10V
Alternative Parts (Cross-Reference): CPH6444-TL-E; CPH6444-TL-W; Si3458BDV-T1-E3;
Introduction Date: April 02, 2002
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - ZXMN6A08E6CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZXMN6A08E6CT-ND
Single FETs, MOSFETs ZXMN6A08E6CT-ND
N-Channel 60V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26

N-Channel 60V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26

Buy Now Datasheet
Single FETs, MOSFETs - ZXMN6A08E6TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZXMN6A08E6TR-ND
Single FETs, MOSFETs ZXMN6A08E6TR-ND
N-Channel 60V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26

N-Channel 60V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26

Buy Now Datasheet
Single FETs, MOSFETs - ZXMN6A08E6DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZXMN6A08E6DKR-ND
Single FETs, MOSFETs ZXMN6A08E6DKR-ND
N-Channel 60V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26

N-Channel 60V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26

Buy Now Datasheet
Singapore
60V 2.8A MOSFET Transistor
278-ZXMN6A08E6TA
60V 2.8A MOSFET Transistor 278-ZXMN6A08E6TA
MOSFET N-CH 60V 2.8A SOT26 Product overview: ZXMN6A08E6TA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 2.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 2.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN6A08E6TA can be used for catalog matching and distributor lookup.

MOSFET N-CH 60V 2.8A SOT26 Product overview: ZXMN6A08E6TA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 2.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 2.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN6A08E6TA can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 60V N-Chnl UMOS

MOSFET 60V N-Chnl UMOS

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZXMN6A08E6TA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ZXMN6A08E6TA
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ZXMN6A08E6TA
MOSFET N-CH 60V 2.8A SOT26

MOSFET N-CH 60V 2.8A SOT26

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number ZXMN6A08E6TA 036975-ZXMN6A08E6TA ZXMN6A08E6CT-ND 278-ZXMN6A08E6TA ZXMN6A08E6TA ZXMN6A08E6TA
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A08E6TA Single FETs, MOSFETs 60V 2.8A MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 60 volts 60 volts 60 volts
IDSS 2800 milliamps
PD 1100 milliwatts 1100 milliwatts 1.1 milliwatts
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