MOSFET N-CH 60V 2.8A SOT26 Product overview: ZXMN6A08E6TA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 2.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 2.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN6A08E6TA can be used for catalog matching and distributor lookup.
N-Channel 60V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26
N-Channel 60V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26
N-Channel 60V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26
MOSFET N-CH 60V 2.8A SOT26
Manufacturer: Diodes Incorporated
Win Source Part Number: 036975-ZXMN6A08E6TA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.1W (Ta)
Family Name: ZXMN6A08E6
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-26
Dimension: SOT-23-6
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 2.8A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 5.8nC @ 10V
Max Input Capacitance: 459pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 80 mOhm @ 4.8A, 10V
Alternative Parts (Cross-Reference): CPH6444-TL-E; CPH6444-TL-W; Si3458BDV-T1-E3;
Introduction Date: April 02, 2002
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 60V 2.8A SOT26
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-ZXMN6A08E6TA | ZXMN6A08E6CT-ND | ZXMN6A08E6TA | 036975-ZXMN6A08E6TA | ZXMN6A08E6TA | ZXMN6A08E6TA |
| Product Name | 60V 2.8A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A08E6TA | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | |||
| Transconductance | 0.0066 kS | |||||
| PD | 1.1 milliwatts | 1100 milliwatts | 1100 milliwatts |
