DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN6A08E6TA ZXMN6A08E6TA

Manufacturer: Diodes Incorporated
Win Source Part Number: 036975-ZXMN6A08E6TA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.1W (Ta)
Family Name: ZXMN6A08E6
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-26
Dimension: SOT-23-6
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 2.8A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 5.8nC @ 10V
Max Input Capacitance: 459pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 80 mOhm @ 4.8A, 10V
Alternative Parts (Cross-Reference): CPH6444-TL-E; CPH6444-TL-W; Si3458BDV-T1-E3;
Introduction Date: April 02, 2002
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient

MOSFET N-CH 60V 2.8A SOT26

N-Channel 60V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26

N-Channel 60V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26

N-Channel 60V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26