DIODES Incorporated Mosfet, N Channel, 60V, 3.5A, Sot-23; Channel Type Diodes Inc. ZXMN6A08E6

The ZXMN6A08E6 is a 60V N-channel enhancement mode MOSFET designed for high-efficiency power management applications, featuring a SOT26 package with approximate dimensions of 3.00mm x 1.60mm and a weight of 0.018 grams. It has a drain-source on-resistance of 80mΩ at VGS=10V and 150mΩ at VGS=4.5V, with a continuous drain current of 3.5A at TA=25°C and 2.8A at TA=70°C. The device meets AEC-Q101 reliability standards, is RoHS compliant, and is halogen- and antimony-free. It has a gate threshold voltage range of 1.0V, a thermal resistance of 73°C/W, and operates from -55°C to +150°C. The package is molded plastic with UL 94 V-0 flammability rating and moisture sensitivity level 1 per J-STD-020.