MOSFET 2N-CH 30V 5.5A 8SO Product overview: ZXMN3G32DN8TA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 5.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5.5A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-ZXMN3G32DN8TA can be used for catalog matching and distributor lookup.
Manufacturer: Diodes Incorporated
Win Source Part Number: 036972-ZXMN3G32DN8TA
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.8W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.5A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 10.5nC @ 10V
Max Input Capacitance: 472pF @ 15V
Maximum Rds On at Id,Vgs: 28 mOhm @ 6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient
Mosfet Array 2 N-Channel (Dual) 30V 5.5A 1.8W Surface Mount 8-SO
Mosfet Array 2 N-Channel (Dual) 30V 5.5A 1.8W Surface Mount 8-SO
Mosfet Array 2 N-Channel (Dual) 30V 5.5A 1.8W Surface Mount 8-SO
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MOSFET 30V Dual N-Channel Enhance. Mode MOSFET
MOSFET 2N-CH 30V 5.5A 8SOIC
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-ZXMN3G32DN8TA | 036972-ZXMN3G32DN8TA | 31-ZXMN3G32DN8TACT-ND | ZXMN3G32DN8TA | ZXMN3G32DN8TA | ZXMN3G32DN8TA |
| Product Name | 30V 5.5A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN3G32DN8TA | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | FET, MOSFET Arrays |
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | |||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | |||
| PD | 2.1 milliwatts | 1800 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
