Mosfet Array 2 N-Channel (Dual) 30V 5.7A 1.8W Surface Mount 8-SO
Mosfet Array 2 N-Channel (Dual) 30V 5.7A 1.8W Surface Mount 8-SO
Mosfet Array 2 N-Channel (Dual) 30V 5.7A 1.8W Surface Mount 8-SO
MOSFET 2N-CH 30V 5.7A 8SO Product overview: ZXMN3F31DN8TA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 5.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5.7A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-ZXMN3F31DN8TA can be used for catalog matching and distributor lookup.
Manufacturer: Diodes Incorporated
Win Source Part Number: 036971-ZXMN3F31DN8TA
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Maximum Power Dissipation: 1.8W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 5.7A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 12.9nC @ 10V
Max Input Capacitance: 608pF @ 15V
Maximum Rds On at Id,Vgs: 24 mOhm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
MOSFET 30V Dual N-channel Enhance. Mode MOSFET
MOSFET 2N-CH 30V 5.7A 8SO
Dual N-Channel 30 V 0.024 Ohm Surface Mount Enhancement Mode MOSFET - SOP-8
MOSFET 2N-CH 30V 5.7A 8SOIC
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | ZXMN3F31DN8DKR-ND | 289-ZXMN3F31DN8TA | 036971-ZXMN3F31DN8TA | ZXMN3F31DN8TA | ZXMN3F31DN8TA | 233-ZXMN3F31DN8TA | ZXMN3F31DN8TA |
| Product Name | FET, MOSFET Arrays | 30V 5.7A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN3F31DN8TA | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Dual N-Channel 30 V 0.024 Ohm Surface Mount Enhancement Mode MOSFET - SOP-8 | FET, MOSFET Arrays |
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | Tape & Reel (TR) | SOT3; 8-SO | 8-SOIC (0.154", 3.90mm Width) | |||
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | |||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | |||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | 30 volts | |||
| PD | 2.1 milliwatts | 1800 milliwatts | 1800 milliwatts |
