DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN3B04N8TC ZXMN3B04N8TC

Manufacturer: Diodes Incorporated
Win Source Part Number: 1120398-ZXMN3B04N8TC
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 7.2A (Ta)
Gate-Source Threshold Voltage: 700mV @ 250μA
Max Gate Charge: 23.1nC @ 4.5V
Max Input Capacitance: 2480pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 25 mOhm @ 7.2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Sufficient

MOSFET N-CH 30V 7.2A 8SO Product overview: ZXMN3B04N8TC from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 7.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 7.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN3B04N8TC can be used for catalog matching and distributor lookup.

N-Channel 30V 7.2A (Ta) 2W (Ta) Surface Mount 8-SO