DIODES Incorporated Single FETs, MOSFETs ZXMN3B01FTA

MOSFET N-CH 30V 1.7A SOT23-3

N-Channel 30V 1.7A (Ta) 625mW (Ta) Surface Mount SOT-23-3

N-Channel 30V 1.7A (Ta) 625mW (Ta) Surface Mount SOT-23-3

N-Channel 30V 1.7A (Ta) 625mW (Ta) Surface Mount SOT-23-3

MOSFET N-CH 30V 1.7A SOT23-3 Product overview: ZXMN3B01FTA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 1.7A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 1.7A, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN3B01FTA can be used for catalog matching and distributor lookup.

Manufacturer: Diodes Incorporated
Win Source Part Number: 057884-ZXMN3B01FTA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 625mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.7A (Ta)
Gate-Source Threshold Voltage: 700mV @ 250μA
Max Gate Charge: 2.93nC @ 4.5V
Max Input Capacitance: 258pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 150 mOhm @ 1.7A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited