DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN3A14FTA ZXMN3A14FTA

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 036969-ZXMN3A14FTA Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 3.2A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 8.6nC @ 10V Max Input Capacitance: 448pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 65 mOhm @ 3.2A, 10V Alternative Parts (Cross-Reference): SI2304DDS-T1-GE3; ZXMN3A14FTC; ZXMN3A14F; Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 036969-ZXMN3A14FTA Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 3.2A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 8.6nC @ 10V Max Input Capacitance: 448pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 65 mOhm @ 3.2A, 10V Alternative Parts (Cross-Reference): SI2304DDS-T1-GE3; ZXMN3A14FTC; ZXMN3A14F; Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN3A14FTA - 036969-ZXMN3A14FTA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN3A14FTA
036969-ZXMN3A14FTA
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN3A14FTA 036969-ZXMN3A14FTA
Manufacturer: Diodes Incorporated Win Source Part Number: 036969-ZXMN3A14FTA Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 3.2A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 8.6nC @ 10V Max Input Capacitance: 448pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 65 mOhm @ 3.2A, 10V Alternative Parts (Cross-Reference): SI2304DDS-T1-GE3; ZXMN3A14FTC; ZXMN3A14F; Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 036969-ZXMN3A14FTA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3.2A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 8.6nC @ 10V
Max Input Capacitance: 448pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 65 mOhm @ 3.2A, 10V
Alternative Parts (Cross-Reference): SI2304DDS-T1-GE3; ZXMN3A14FTC; ZXMN3A14F;
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
30V 3.2A SOT23 MOSFET Transistor
278-ZXMN3A14FTA
30V 3.2A SOT23 MOSFET Transistor 278-ZXMN3A14FTA
MOSFET N-CH 30V 3.2A SOT23-3 Product overview: ZXMN3A14FTA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 3.2A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 3.2A, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN3A14FTA can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 3.2A SOT23-3 Product overview: ZXMN3A14FTA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 3.2A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 3.2A, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN3A14FTA can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - ZXMN3A14FTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZXMN3A14FTR-ND
Single FETs, MOSFETs ZXMN3A14FTR-ND
N-Channel 30V 3.2A (Ta) 1W (Ta) Surface Mount SOT-23-3

N-Channel 30V 3.2A (Ta) 1W (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Single FETs, MOSFETs - ZXMN3A14FDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZXMN3A14FDKR-ND
Single FETs, MOSFETs ZXMN3A14FDKR-ND
N-Channel 30V 3.2A (Ta) 1W (Ta) Surface Mount SOT-23-3

N-Channel 30V 3.2A (Ta) 1W (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Single FETs, MOSFETs - ZXMN3A14FCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZXMN3A14FCT-ND
Single FETs, MOSFETs ZXMN3A14FCT-ND
N-Channel 30V 3.2A (Ta) 1W (Ta) Surface Mount SOT-23-3

N-Channel 30V 3.2A (Ta) 1W (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZXMN3A14FTA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ZXMN3A14FTA
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ZXMN3A14FTA
MOSFET N-CH 30V 3.2A SOT23-3

MOSFET N-CH 30V 3.2A SOT23-3

Supplier's Site
Mosfet, N-Ch, 30V, 3.2A, 150Deg C, 1W Rohs Compliant Diodes Inc. - 69AH3975 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 3.2A, 150Deg C, 1W Rohs Compliant Diodes Inc.
69AH3975
Mosfet, N-Ch, 30V, 3.2A, 150Deg C, 1W Rohs Compliant Diodes Inc. 69AH3975
MOSFET, N-CH, 30V, 3.2A, 150DEG C, 1W ROHS COMPLIANT: YES

MOSFET, N-CH, 30V, 3.2A, 150DEG C, 1W ROHS COMPLIANT: YES

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N Channel

MOSFET N Channel

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 036969-ZXMN3A14FTA 278-ZXMN3A14FTA ZXMN3A14FTR-ND ZXMN3A14FTA 69AH3975 ZXMN3A14FTA
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN3A14FTA 30V 3.2A SOT23 MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 30V, 3.2A, 150Deg C, 1W Rohs Compliant Diodes Inc. MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
PD 1000 milliwatts 1 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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