DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN3A04KTC ZXMN3A04KTC

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 036967-ZXMN3A04KTC Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.15W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12A (Ta) Gate-Source Threshold Voltage: 1V @ 250mA Max Gate Charge: 36.8nC @ 10V Max Input Capacitance: 1890pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 20 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 036967-ZXMN3A04KTC Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.15W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12A (Ta) Gate-Source Threshold Voltage: 1V @ 250mA Max Gate Charge: 36.8nC @ 10V Max Input Capacitance: 1890pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 20 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN3A04KTC - 036967-ZXMN3A04KTC - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN3A04KTC
036967-ZXMN3A04KTC
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN3A04KTC 036967-ZXMN3A04KTC
Manufacturer: Diodes Incorporated Win Source Part Number: 036967-ZXMN3A04KTC Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.15W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12A (Ta) Gate-Source Threshold Voltage: 1V @ 250mA Max Gate Charge: 36.8nC @ 10V Max Input Capacitance: 1890pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 20 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 036967-ZXMN3A04KTC
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.15W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12A (Ta)
Gate-Source Threshold Voltage: 1V @ 250mA
Max Gate Charge: 36.8nC @ 10V
Max Input Capacitance: 1890pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 20 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore, Singapore
30V 18.4A DPAK MOSFET Transistor
278-ZXMN3A04KTC
30V 18.4A DPAK MOSFET Transistor 278-ZXMN3A04KTC
MOSFET N-CH 30V 18.4A DPAK Product overview: ZXMN3A04KTC from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 18.4A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 18.4A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN3A04KTC can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 18.4A DPAK Product overview: ZXMN3A04KTC from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 18.4A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 18.4A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN3A04KTC can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 31-ZXMN3A04KTCTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
31-ZXMN3A04KTCTR-ND
Single FETs, MOSFETs 31-ZXMN3A04KTCTR-ND
MOSFET N-CH 30V 18.4A DPAK

MOSFET N-CH 30V 18.4A DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 31-ZXMN3A04KTCCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
31-ZXMN3A04KTCCT-ND
Single FETs, MOSFETs 31-ZXMN3A04KTCCT-ND
MOSFET N-CH 30V 18.4A DPAK

MOSFET N-CH 30V 18.4A DPAK

Buy Now Datasheet
Single FETs, MOSFETs - 31-ZXMN3A04KTCDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
31-ZXMN3A04KTCDKR-ND
Single FETs, MOSFETs 31-ZXMN3A04KTCDKR-ND
MOSFET N-CH 30V 18.4A DPAK

MOSFET N-CH 30V 18.4A DPAK

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 30 Volt 18.4A

MOSFET N-Ch 30 Volt 18.4A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZXMN3A04KTC - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ZXMN3A04KTC
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ZXMN3A04KTC
MOSFET N-CH 30V 18.4A DPAK

MOSFET N-CH 30V 18.4A DPAK

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 036967-ZXMN3A04KTC 278-ZXMN3A04KTC 31-ZXMN3A04KTCTR-ND ZXMN3A04KTC ZXMN3A04KTC
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN3A04KTC 30V 18.4A DPAK MOSFET Transistor Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
PD 2150 milliwatts 10.1 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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