DIODES Incorporated FETs - Single - ZXMN3A02X8TA ZXMN3A02X8TA

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1283442-ZXMN3A02X8TA Packaging: Cut Tape (CT) Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 8-MSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.diodes.com/ Manufacturer Package: 8-TSSOP, 8-MSOP Power Dissipation (Maximum): 1.1W Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 5.3A Rds On (Maximum) at Id, Vgs: 25mOhm at 12A, 10V Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 26.8nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1400pF at 25V
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1283442-ZXMN3A02X8TA Packaging: Cut Tape (CT) Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 8-MSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.diodes.com/ Manufacturer Package: 8-TSSOP, 8-MSOP Power Dissipation (Maximum): 1.1W Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 5.3A Rds On (Maximum) at Id, Vgs: 25mOhm at 12A, 10V Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 26.8nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1400pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - ZXMN3A02X8TA - 1283442-ZXMN3A02X8TA - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - ZXMN3A02X8TA
1283442-ZXMN3A02X8TA
FETs - Single - ZXMN3A02X8TA 1283442-ZXMN3A02X8TA
Manufacturer: Diodes Incorporated Win Source Part Number: 1283442-ZXMN3A02X8TA Packaging: Cut Tape (CT) Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: 8-MSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.diodes.com/ Manufacturer Package: 8-TSSOP, 8-MSOP Power Dissipation (Maximum): 1.1W Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 30V Id - Continuous Drain Current: 5.3A Rds On (Maximum) at Id, Vgs: 25mOhm at 12A, 10V Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 26.8nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 1400pF at 25V

Manufacturer: Diodes Incorporated
Win Source Part Number: 1283442-ZXMN3A02X8TA
Packaging: Cut Tape (CT)
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: 8-MSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.diodes.com/
Manufacturer Package: 8-TSSOP, 8-MSOP
Power Dissipation (Maximum): 1.1W
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 30V
Id - Continuous Drain Current: 5.3A
Rds On (Maximum) at Id, Vgs: 25mOhm at 12A, 10V
Gate Source Voltage(th) (Maximum) at Id: 1V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 26.8nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1400pF at 25V

Buy Now
Single FETs, MOSFETs - ZXMN3A02X8TA - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
ZXMN3A02X8TA
Single FETs, MOSFETs ZXMN3A02X8TA
MOSFET N-CH 30V 5.3A 8MSOP

MOSFET N-CH 30V 5.3A 8MSOP

Supplier's Site Datasheet
Singapore
30V 5.3A MOSFET Transistor
278-ZXMN3A02X8TA
30V 5.3A MOSFET Transistor 278-ZXMN3A02X8TA
MOSFET N-CH 30V 5.3A 8MSOP Product overview: ZXMN3A02X8TA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 5.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN3A02X8TA can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 5.3A 8MSOP Product overview: ZXMN3A02X8TA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 5.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 5.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN3A02X8TA can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 31-ZXMN3A02X8TACT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
31-ZXMN3A02X8TACT-ND
Single FETs, MOSFETs 31-ZXMN3A02X8TACT-ND
N-Channel 30V 5.3A (Ta) 1.1W (Ta) Surface Mount 8-MSOP

N-Channel 30V 5.3A (Ta) 1.1W (Ta) Surface Mount 8-MSOP

Buy Now Datasheet
Single FETs, MOSFETs - 31-ZXMN3A02X8TATR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
31-ZXMN3A02X8TATR-ND
Single FETs, MOSFETs 31-ZXMN3A02X8TATR-ND
N-Channel 30V 5.3A (Ta) 1.1W (Ta) Surface Mount 8-MSOP

N-Channel 30V 5.3A (Ta) 1.1W (Ta) Surface Mount 8-MSOP

Buy Now Datasheet
Mosfet, N-Ch, 30V, 5.3A, Msop Rohs Compliant Diodes Inc. - 29AK9170 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 5.3A, Msop Rohs Compliant Diodes Inc.
29AK9170
Mosfet, N-Ch, 30V, 5.3A, Msop Rohs Compliant Diodes Inc. 29AK9170
MOSFET, N-CH, 30V, 5.3A, MSOP ROHS COMPLIANT: YES

MOSFET, N-CH, 30V, 5.3A, MSOP ROHS COMPLIANT: YES

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZXMN3A02X8TA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ZXMN3A02X8TA
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ZXMN3A02X8TA
MOSFET N-CH 30V 5.3A 8MSOP

MOSFET N-CH 30V 5.3A 8MSOP

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1283442-ZXMN3A02X8TA ZXMN3A02X8TA 278-ZXMN3A02X8TA 31-ZXMN3A02X8TACT-ND 29AK9170 ZXMN3A02X8TA
Product Name FETs - Single - ZXMN3A02X8TA Single FETs, MOSFETs 30V 5.3A MOSFET Transistor Single FETs, MOSFETs Mosfet, N-Ch, 30V, 5.3A, Msop Rohs Compliant Diodes Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
MOSFET Operating Mode Enhancement Enhancement
V(BR)DSS 30 volts 30 volts 30 volts
PD 1100 milliwatts 1100 milliwatts 1.1 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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