DIODES Incorporated Single FETs, MOSFETs ZXMN3A02N8TA

Description
N-Channel 30V 7.3A (Ta) 1.56W (Ta) Surface Mount 8-SO
Request a Quote Datasheet
Description
N-Channel 30V 7.3A (Ta) 1.56W (Ta) Surface Mount 8-SO
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - ZXMN3A02N8TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZXMN3A02N8TR-ND
Single FETs, MOSFETs ZXMN3A02N8TR-ND
N-Channel 30V 7.3A (Ta) 1.56W (Ta) Surface Mount 8-SO

N-Channel 30V 7.3A (Ta) 1.56W (Ta) Surface Mount 8-SO

Buy Now Datasheet
Singapore
30V 7.3A MOSFET Transistor
278-ZXMN3A02N8TA
30V 7.3A MOSFET Transistor 278-ZXMN3A02N8TA
MOSFET N-CH 30V 7.3A 8SO Product overview: ZXMN3A02N8TA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 7.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 7.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN3A02N8TA can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 7.3A 8SO Product overview: ZXMN3A02N8TA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 7.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 7.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN3A02N8TA can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN3A02N8TA - 119730-ZXMN3A02N8TA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN3A02N8TA
119730-ZXMN3A02N8TA
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN3A02N8TA 119730-ZXMN3A02N8TA
Manufacturer: Diodes Incorporated Win Source Part Number: 119730-ZXMN3A02N8TA Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.56W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-SO Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 7.3A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 26.8nC @ 10V Max Input Capacitance: 1400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 25 mOhm @ 12A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Motor Drive & Control, LED Lighting

Manufacturer: Diodes Incorporated
Win Source Part Number: 119730-ZXMN3A02N8TA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.56W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SO
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 7.3A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 26.8nC @ 10V
Max Input Capacitance: 1400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 25 mOhm @ 12A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Motor Drive & Control, LED Lighting

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZXMN3A02N8TA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ZXMN3A02N8TA
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ZXMN3A02N8TA
MOSFET N-CH 30V 7.3A 8SO

MOSFET N-CH 30V 7.3A 8SO

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number ZXMN3A02N8TR-ND 278-ZXMN3A02N8TA 119730-ZXMN3A02N8TA ZXMN3A02N8TA
Product Name Single FETs, MOSFETs 30V 7.3A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN3A02N8TA Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type "8-SOIC (0.154"", 3.90mm Width)" Tape & Reel (TR) SOT3; 8-SO 8-SOIC (0.154, 3.90mm Width)
PD 1560 milliwatts 1560 milliwatts
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