DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN3A01FTC ZXMN3A01FTC

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1120391-ZXMN3A01FTC Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 625mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 1.8A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 3.9nC @ 10V Max Input Capacitance: 190pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 120 mOhm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1120391-ZXMN3A01FTC Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 625mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 1.8A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 3.9nC @ 10V Max Input Capacitance: 190pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 120 mOhm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Sufficient
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Suppliers

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Product
Description
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN3A01FTC - 1120391-ZXMN3A01FTC - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN3A01FTC
1120391-ZXMN3A01FTC
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN3A01FTC 1120391-ZXMN3A01FTC
Manufacturer: Diodes Incorporated Win Source Part Number: 1120391-ZXMN3A01FTC Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 625mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 1.8A (Ta) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 3.9nC @ 10V Max Input Capacitance: 190pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 120 mOhm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Sufficient

Manufacturer: Diodes Incorporated
Win Source Part Number: 1120391-ZXMN3A01FTC
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 625mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.8A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 3.9nC @ 10V
Max Input Capacitance: 190pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 120 mOhm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - ZXMN3A01FTC-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZXMN3A01FTC-ND
Single FETs, MOSFETs ZXMN3A01FTC-ND
N-Channel 30V 1.8A (Ta) 625mW (Ta) Surface Mount SOT-23-3

N-Channel 30V 1.8A (Ta) 625mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZXMN3A01FTC - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ZXMN3A01FTC
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ZXMN3A01FTC
MOSFET N-CH 30V 1.8A SOT23-3

MOSFET N-CH 30V 1.8A SOT23-3

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1120391-ZXMN3A01FTC ZXMN3A01FTC-ND ZXMN3A01FTC
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN3A01FTC Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 30 volts
PD 625 milliwatts
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