DIODES Incorporated Single FETs, MOSFETs ZXMN3A01E6TA

MOSFET N-CH 30V 2.4A SOT-23-6

MOSFET N-CH 30V 2.4A SOT-23-6 Product overview: ZXMN3A01E6TA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2.4A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2.4A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN3A01E6TA can be used for catalog matching and distributor lookup.

N-Channel 30V 2.4A (Ta) 1.1W (Ta) Surface Mount SOT-23-6

N-Channel 30V 2.4A (Ta) 1.1W (Ta) Surface Mount SOT-23-6

N-Channel 30V 2.4A (Ta) 1.1W (Ta) Surface Mount SOT-23-6

Manufacturer: Diodes Incorporated
Win Source Part Number: 036964-ZXMN3A01E6TA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-6
Dimension: SOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.4A (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 3.9nC @ 10V
Max Input Capacitance: 190pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 120 mOhm @ 2.5A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance