DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN2F34MATA ZXMN2F34MATA

Manufacturer: Diodes Incorporated
Win Source Part Number: 118389-ZXMN2F34MATA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.35W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 3-DFN (2x2)
Dimension: 3-VDFN Exposed Pad
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 2.8nC @ 4.5V
Max Input Capacitance: 277pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 60 mOhm @ 2.5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Sufficient

N-Channel 20V 4A (Ta) 1.35W (Ta) Surface Mount DFN322

MOSFET N-CH 20V 4A DFN322 Product overview: ZXMN2F34MATA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN2F34MATA can be used for catalog matching and distributor lookup.