DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN2F30FHTA ZXMN2F30FHTA

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 036963-ZXMN2F30FHTA Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 960mW (Ta) Family Name: ZXMN2F30FH Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.1A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 4.8nC @ 4.5V Max Input Capacitance: 452pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 45 mOhm @ 2.5A, 4.5V Alternative Parts (Cross-Reference): IRLML2502GTRPBF; TSM2310CX RF; TSM2314CX RFG; Introduction Date: January 09, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2025 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 036963-ZXMN2F30FHTA Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 960mW (Ta) Family Name: ZXMN2F30FH Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.1A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 4.8nC @ 4.5V Max Input Capacitance: 452pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 45 mOhm @ 2.5A, 4.5V Alternative Parts (Cross-Reference): IRLML2502GTRPBF; TSM2310CX RF; TSM2314CX RFG; Introduction Date: January 09, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2025 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN2F30FHTA - 036963-ZXMN2F30FHTA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN2F30FHTA
036963-ZXMN2F30FHTA
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN2F30FHTA 036963-ZXMN2F30FHTA
Manufacturer: Diodes Incorporated Win Source Part Number: 036963-ZXMN2F30FHTA Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 960mW (Ta) Family Name: ZXMN2F30FH Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-23-3 Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4.1A (Ta) Gate-Source Threshold Voltage: 1.5V @ 250μA Max Gate Charge: 4.8nC @ 4.5V Max Input Capacitance: 452pF @ 10V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 45 mOhm @ 2.5A, 4.5V Alternative Parts (Cross-Reference): IRLML2502GTRPBF; TSM2310CX RF; TSM2314CX RFG; Introduction Date: January 09, 2008 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2025 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Sufficient

Manufacturer: Diodes Incorporated
Win Source Part Number: 036963-ZXMN2F30FHTA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 960mW (Ta)
Family Name: ZXMN2F30FH
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.1A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 4.8nC @ 4.5V
Max Input Capacitance: 452pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 45 mOhm @ 2.5A, 4.5V
Alternative Parts (Cross-Reference): IRLML2502GTRPBF; TSM2310CX RF; TSM2314CX RFG;
Introduction Date: January 09, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - ZXMN2F30FHDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZXMN2F30FHDKR-ND
Single FETs, MOSFETs ZXMN2F30FHDKR-ND
N-Channel 20V 4.1A (Ta) 960mW (Ta) Surface Mount SOT-23-3

N-Channel 20V 4.1A (Ta) 960mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Single FETs, MOSFETs - ZXMN2F30FHCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZXMN2F30FHCT-ND
Single FETs, MOSFETs ZXMN2F30FHCT-ND
N-Channel 20V 4.1A (Ta) 960mW (Ta) Surface Mount SOT-23-3

N-Channel 20V 4.1A (Ta) 960mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Single FETs, MOSFETs - ZXMN2F30FHTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZXMN2F30FHTR-ND
Single FETs, MOSFETs ZXMN2F30FHTR-ND
N-Channel 20V 4.1A (Ta) 960mW (Ta) Surface Mount SOT-23-3

N-Channel 20V 4.1A (Ta) 960mW (Ta) Surface Mount SOT-23-3

Buy Now Datasheet
Single FETs, MOSFETs - ZXMN2F30FHTA - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
ZXMN2F30FHTA
Single FETs, MOSFETs ZXMN2F30FHTA
MOSFET N-CH 20V 4.1A SOT23-3

MOSFET N-CH 20V 4.1A SOT23-3

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 20V N-Channel Enhance. Mode MOSFET

MOSFET 20V N-Channel Enhance. Mode MOSFET

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZXMN2F30FHTA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ZXMN2F30FHTA
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ZXMN2F30FHTA
MOSFET N-CH 20V 4.1A SOT23-3

MOSFET N-CH 20V 4.1A SOT23-3

Supplier's Site
Mosfet, N Channel, 20V, 4.9A, Sot-23; Channel Type Diodes Inc. - 08N2754 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 20V, 4.9A, Sot-23; Channel Type Diodes Inc.
08N2754
Mosfet, N Channel, 20V, 4.9A, Sot-23; Channel Type Diodes Inc. 08N2754
MOSFET, N CHANNEL, 20V, 4.9A, SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:900mV RoHS Compliant: Yes

MOSFET, N CHANNEL, 20V, 4.9A, SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:900mV RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 036963-ZXMN2F30FHTA ZXMN2F30FHDKR-ND ZXMN2F30FHTA ZXMN2F30FHTA ZXMN2F30FHTA 08N2754
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN2F30FHTA Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Channel, 20V, 4.9A, Sot-23; Channel Type Diodes Inc.
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 20 volts 20 volts
PD 960 milliwatts 960 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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