Manufacturer: Diodes Incorporated
Win Source Part Number: 036963-ZXMN2F30FHTA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 960mW (Ta)
Family Name: ZXMN2F30FH
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.1A (Ta)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 4.8nC @ 4.5V
Max Input Capacitance: 452pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 45 mOhm @ 2.5A, 4.5V
Alternative Parts (Cross-Reference): IRLML2502GTRPBF; TSM2310CX RF; TSM2314CX RFG;
Introduction Date: January 09, 2008
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 20V 4.1A SOT23-3 Product overview: ZXMN2F30FHTA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.1A, SOT23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.1A, SOT23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN2F30FHTA can be used for catalog matching and distributor lookup.
MOSFET N-CH 20V 4.1A SOT23-3
N-Channel 20V 4.1A (Ta) 960mW (Ta) Surface Mount SOT-23-3
N-Channel 20V 4.1A (Ta) 960mW (Ta) Surface Mount SOT-23-3
N-Channel 20V 4.1A (Ta) 960mW (Ta) Surface Mount SOT-23-3
MOSFET 20V N-Channel Enhance. Mode MOSFET
MOSFET N-CH 20V 4.1A SOT23-3
MOSFET, N CHANNEL, 20V, 4.9A, SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:900mV RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 036963-ZXMN2F30FHTA | 278-ZXMN2F30FHTA | ZXMN2F30FHTA | ZXMN2F30FHCT-ND | ZXMN2F30FHTA | ZXMN2F30FHTA | 08N2754 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN2F30FHTA | 20V 4.1A SOT23 MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Channel, 20V, 4.9A, Sot-23; Channel Type Diodes Inc. |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | ||||
| PD | 960 milliwatts | 1.4 milliwatts | 960 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; SOT23; SOT-23-3 | Tape & Reel (TR) | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3; SOT23 |
