MOSFET 2N-CH 20V 2.9A 8MLP Product overview: ZXMN2AM832TA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 2.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN2AM832TA can be used for catalog matching and distributor lookup.
Manufacturer: Diodes Incorporated
Win Source Part Number: 044172-ZXMN2AM832TA
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-MLP (3x2)
Maximum Power Dissipation: 1.7W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 2.9A
Gate-Source Threshold Voltage: 700mV @ 250μA (Min)
Max Gate Charge: 3.1nC @ 4.5V
Max Input Capacitance: 299pF @ 15V
Maximum Rds On at Id,Vgs: 120 mOhm @ 4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 20V 2.9A 8MLP
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-ZXMN2AM832TA | 044172-ZXMN2AM832TA | ZXMN2AM832TA |
| Product Name | 20V 2.9A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN2AM832TA | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | ||
| V(BR)DSS | 20 volts | 20 volts | |
| PD | 3000 milliwatts | 1700 milliwatts | |
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |