MOSFET N-CH 20V 3.4A SOT23-3
Manufacturer: Diodes Incorporated
Win Source Part Number: 036959-ZXMN2A14FTA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 3.4A (Ta)
Gate-Source Threshold Voltage: 700mV @ 250μA
Max Gate Charge: 6.6nC @ 4.5V
Max Input Capacitance: 544pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 60 mOhm @ 3.4A, 4.5V
Alternative Parts (Cross-Reference): SI2302CDS-T1-GE3; ZXMN2A14F; AO3430; ZXMN2A14FTA;
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
N-Channel 20V 3.4A (Ta) 1W (Ta) Surface Mount SOT-23-3
N-Channel 20V 3.4A (Ta) 1W (Ta) Surface Mount SOT-23-3
N-Channel 20V 3.4A (Ta) 1W (Ta) Surface Mount SOT-23-3
MOSFET, N-CH, 20V, 3.4A, SOT-23 ROHS COMPLIANT: YES
MOSFET N-CH 20V 3.4A SOT23-3
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | ZXMN2A14FTA | 036959-ZXMN2A14FTA | ZXMN2A14FDKR-ND | 29AK9163 | ZXMN2A14FTA | ZXMN2A14FTA |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN2A14FTA | Single FETs, MOSFETs | Mosfet, N-Ch, 20V, 3.4A, Sot-23 Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 20 volts | 20 volts | ||||
| IDSS | 3400 milliamps |
