Manufacturer: Diodes Incorporated
Win Source Part Number: 1120390-ZXMN2A04DN8T
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOP
Maximum Power Dissipation: 1.8W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 5.9A
Gate-Source Threshold Voltage: 700mV @ 250μA (Min)
Max Gate Charge: 22.1nC @ 5V
Max Input Capacitance: 1880pF @ 10V
Maximum Rds On at Id,Vgs: 25 mOhm @ 5.9A, 4.5V
Alternative Parts (Cross-Reference): FDS6894AZ; ZXMN2A04DN8; ZXMN2A04DN8TC; ZXMN2A04DN8TA;
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Sufficient
Mosfet Array 2 N-Channel (Dual) 20V 5.9A 1.8W Surface Mount 8-SO
MOSFET 2N-CH 20V 5.9A 8SO
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1120390-ZXMN2A04DN8TC | ZXMN2A04DN8TC-ND | ZXMN2A04DN8TC |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN2A04DN8TC | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | ||
| V(BR)DSS | 20 volts | ||
| PD | 1800 milliwatts |
