DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN2A04DN8TA ZXMN2A04DN8TA

Manufacturer: Diodes Incorporated
Win Source Part Number: 036958-ZXMN2A04DN8TA
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOP
Maximum Power Dissipation: 1.8W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 5.9A
Gate-Source Threshold Voltage: 700mV @ 250μA (Min)
Max Gate Charge: 22.1nC @ 5V
Max Input Capacitance: 1880pF @ 10V
Maximum Rds On at Id,Vgs: 25 mOhm @ 5.9A, 4.5V
Alternative Parts (Cross-Reference): FDS6894AZ; ZXMN2A04DN8; ZXMN2A04DN8TC; ZXMN2A04DN8TA;
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance

Mosfet Array 2 N-Channel (Dual) 20V 5.9A 1.8W Surface Mount 8-SO

Mosfet Array 2 N-Channel (Dual) 20V 5.9A 1.8W Surface Mount 8-SO

MOSFET 2N-CH 20V 5.9A 8SO Product overview: ZXMN2A04DN8TA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 5.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 5.9A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-ZXMN2A04DN8TA can be used for catalog matching and distributor lookup.

MOSFET 2N-CH 20V 5.9A 8-SOIC