DIODES Incorporated Single FETs, MOSFETs ZXMN2A02X8TC

Description
N-Channel 20V 6.2A (Ta) 1.1W (Ta) Surface Mount 8-MSOP
Request a Quote Datasheet
Description
N-Channel 20V 6.2A (Ta) 1.1W (Ta) Surface Mount 8-MSOP
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - ZXMN2A02X8TC-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZXMN2A02X8TC-ND
Single FETs, MOSFETs ZXMN2A02X8TC-ND
N-Channel 20V 6.2A (Ta) 1.1W (Ta) Surface Mount 8-MSOP

N-Channel 20V 6.2A (Ta) 1.1W (Ta) Surface Mount 8-MSOP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN2A02X8TC - 1120389-ZXMN2A02X8TC - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN2A02X8TC
1120389-ZXMN2A02X8TC
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN2A02X8TC 1120389-ZXMN2A02X8TC
Manufacturer: Diodes Incorporated Win Source Part Number: 1120389-ZXMN2A02X8TC Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-MSOP Dimension: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6.2A (Ta) Gate-Source Threshold Voltage: 700mV @ 250μA Max Gate Charge: 18.6nC @ 4.5V Max Input Capacitance: 1900pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 20 mOhm @ 11A, 4.5V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 1120389-ZXMN2A02X8TC
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-MSOP
Dimension: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6.2A (Ta)
Gate-Source Threshold Voltage: 700mV @ 250μA
Max Gate Charge: 18.6nC @ 4.5V
Max Input Capacitance: 1900pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 20 mOhm @ 11A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZXMN2A02X8TC - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ZXMN2A02X8TC
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ZXMN2A02X8TC
MOSFET N-CH 20V 6.2A 8MSOP

MOSFET N-CH 20V 6.2A 8MSOP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number ZXMN2A02X8TC-ND 1120389-ZXMN2A02X8TC ZXMN2A02X8TC
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN2A02X8TC Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type "8-TSSOP, 8-MSOP (0.118"", 3.00mm Width)" SOT3; 8-MSOP 18.6 nC @ 4.5 V
V(BR)DSS 20 volts
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