MOSFET N-CH 20V 1.9A SOT23-3
Manufacturer: Diodes Incorporated
Win Source Part Number: 036954-ZXMN2A01FTA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 625mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-23-3
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 1.9A (Ta)
Gate-Source Threshold Voltage: 700mV @ 250μA
Max Gate Charge: 3nC @ 4.5V
Max Input Capacitance: 303pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 120 mOhm @ 4A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient
N-Channel 20V 1.9A (Ta) 625mW (Ta) Surface Mount SOT-23-3
N-Channel 20V 1.9A (Ta) 625mW (Ta) Surface Mount SOT-23-3
N-Channel 20V 1.9A (Ta) 625mW (Ta) Surface Mount SOT-23-3
N CHANNEL MOSFET, 20V, 2.2A, SOT-23; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:700mV RoHS Compliant: Yes
MOSFET N-CH 20V 1.9A SOT23-3
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | ZXMN2A01FTA | 036954-ZXMN2A01FTA | ZXMN2A01FCT-ND | 38K9591 | ZXMN2A01FTA |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN2A01FTA | Single FETs, MOSFETs | N Channel Mosfet, 20V, 2.2A, Sot-23; Channel Type Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 20 volts | 20 volts | |||
| IDSS | 1900 milliamps | 2200 milliamps |
