DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN10A25K ZXMN10A25K

Manufacturer: Diodes Incorporated
Win Source Part Number: 1120386-ZXMN10A25K
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.11W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 4.2A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 17.16nC @ 10V
Max Input Capacitance: 859pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 125 mOhm @ 2.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance

N-Channel 100V 4.2A (Ta) 2.11W (Ta) Surface Mount TO-252-3

MOSFET N-CH 100V 4.2A TO252-3 Product overview: ZXMN10A25K from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 4.2A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 4.2A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN10A25K can be used for catalog matching and distributor lookup.