DIODES Incorporated Single FETs, MOSFETs ZXMN10A11KTC

Description
N-Channel 100V 2.4A (Ta) 2.11W (Ta) Surface Mount TO-252-3
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Description
N-Channel 100V 2.4A (Ta) 2.11W (Ta) Surface Mount TO-252-3
Request a Quote Datasheet

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Single FETs, MOSFETs - ZXMN10A11KTCDITR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZXMN10A11KTCDITR-ND
Single FETs, MOSFETs ZXMN10A11KTCDITR-ND
N-Channel 100V 2.4A (Ta) 2.11W (Ta) Surface Mount TO-252-3

N-Channel 100V 2.4A (Ta) 2.11W (Ta) Surface Mount TO-252-3

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN10A11KTC - 036951-ZXMN10A11KTC - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN10A11KTC
036951-ZXMN10A11KTC
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN10A11KTC 036951-ZXMN10A11KTC
Manufacturer: Diodes Incorporated Win Source Part Number: 036951-ZXMN10A11KTC Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.11W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-252-3 Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 2.4A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 5.4nC @ 10V Max Input Capacitance: 274pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 350 mOhm @ 2.6A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 036951-ZXMN10A11KTC
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.11W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-252-3
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 2.4A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 5.4nC @ 10V
Max Input Capacitance: 274pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 350 mOhm @ 2.6A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance

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Sheung Wan, Hong Kong
MOSFET N-Chan 100V MOSFET (UMOS)

MOSFET N-Chan 100V MOSFET (UMOS)

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZXMN10A11KTC - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ZXMN10A11KTC
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ZXMN10A11KTC
MOSFET N-CH 100V 2.4A TO252-2

MOSFET N-CH 100V 2.4A TO252-2

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Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number ZXMN10A11KTCDITR-ND 036951-ZXMN10A11KTC ZXMN10A11KTC ZXMN10A11KTC
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN10A11KTC MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 SOT3; TO-252 (DPAK); TO-252-3 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
V(BR)DSS 100 volts
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