DIODES Incorporated Single FETs, MOSFETs ZXMN10A11GTA

Description
N-Channel 100V 1.7A (Ta) 2W (Ta) Surface Mount SOT-223-3
Request a Quote Datasheet
Description
N-Channel 100V 1.7A (Ta) 2W (Ta) Surface Mount SOT-223-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - ZXMN10A11GCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZXMN10A11GCT-ND
Single FETs, MOSFETs ZXMN10A11GCT-ND
N-Channel 100V 1.7A (Ta) 2W (Ta) Surface Mount SOT-223-3

N-Channel 100V 1.7A (Ta) 2W (Ta) Surface Mount SOT-223-3

Buy Now Datasheet
Single FETs, MOSFETs - ZXMN10A11GTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
ZXMN10A11GTR-ND
Single FETs, MOSFETs ZXMN10A11GTR-ND
N-Channel 100V 1.7A (Ta) 2W (Ta) Surface Mount SOT-223-3

N-Channel 100V 1.7A (Ta) 2W (Ta) Surface Mount SOT-223-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN10A11GTA - 036950-ZXMN10A11GTA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN10A11GTA
036950-ZXMN10A11GTA
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN10A11GTA 036950-ZXMN10A11GTA
Manufacturer: Diodes Incorporated Win Source Part Number: 036950-ZXMN10A11GTA Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta) Family Name: ZXMN10A11G Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-223 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1.7A (Ta) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 5.4nC @ 10V Max Input Capacitance: 274pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 350 mOhm @ 2.6A, 10V Alternative Parts (Cross-Reference): PHT4NQ10LT; PHT4NQ10LT,135; FQT7N10L; Introduction Date: April 02, 2002 ECCN: EAR99 Country of Origin: China, Germany Estimated EOL Date: 2025 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 036950-ZXMN10A11GTA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta)
Family Name: ZXMN10A11G
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1.7A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 5.4nC @ 10V
Max Input Capacitance: 274pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 350 mOhm @ 2.6A, 10V
Alternative Parts (Cross-Reference): PHT4NQ10LT; PHT4NQ10LT,135; FQT7N10L;
Introduction Date: April 02, 2002
ECCN: EAR99
Country of Origin: China, Germany
Estimated EOL Date: 2025
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
100V 1.7A MOSFET Transistor
278-ZXMN10A11GTA
100V 1.7A MOSFET Transistor 278-ZXMN10A11GTA
MOSFET N-CH 100V 1.7A SOT223 Product overview: ZXMN10A11GTA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN10A11GTA can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 1.7A SOT223 Product overview: ZXMN10A11GTA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN10A11GTA can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZXMN10A11GTA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ZXMN10A11GTA
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ZXMN10A11GTA
MOSFET N-CH 100V 1.7A SOT223

MOSFET N-CH 100V 1.7A SOT223

Supplier's Site
Transistor - 177188541 - Radwell International
Willingboro, NJ, United States
Transistor
177188541
Transistor 177188541
POWER FIELD-EFFECT TRANSISTOR, 2.4A I(D), 100V, 0.35OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOT-223, 4 PIN. FREE 2 YEAR RADWELL WARRANTY

POWER FIELD-EFFECT TRANSISTOR, 2.4A I(D), 100V, 0.35OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOT-223, 4 PIN. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 100V N-Chnl UMOS

MOSFET 100V N-Chnl UMOS

Buy Now Datasheet
Single FETs, MOSFETs - ZXMN10A11GTA - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
ZXMN10A11GTA
Single FETs, MOSFETs ZXMN10A11GTA
MOSFET N-CH 100V 1.7A SOT223

MOSFET N-CH 100V 1.7A SOT223

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Radwell International VAST STOCK CO., LIMITED ODG (Origin Data Global)
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number ZXMN10A11GCT-ND 036950-ZXMN10A11GTA 278-ZXMN10A11GTA ZXMN10A11GTA 177188541 ZXMN10A11GTA ZXMN10A11GTA
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN10A11GTA 100V 1.7A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor MOSFET Single FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel N-Channel; N-Channel
Package Type SOT223; TO-261-4, TO-261AA SOT3; SOT-223 Tape & Reel (TR) 274 pF @ 50 V SOT223; TO-261-4, TO-261AA
V(BR)DSS 100 volts 100 volts 100 volts
PD 2000 milliwatts 2 milliwatts 2000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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6 suppliers