N-Channel 100V 1.7A (Ta) 2W (Ta) Surface Mount SOT-223-3
N-Channel 100V 1.7A (Ta) 2W (Ta) Surface Mount SOT-223-3
MOSFET N-CH 100V 1.7A SOT223 Product overview: ZXMN10A11GTA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN10A11GTA can be used for catalog matching and distributor lookup.
Manufacturer: Diodes Incorporated
Win Source Part Number: 036950-ZXMN10A11GTA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta)
Family Name: ZXMN10A11G
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1.7A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 5.4nC @ 10V
Max Input Capacitance: 274pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 350 mOhm @ 2.6A, 10V
Alternative Parts (Cross-Reference): PHT4NQ10LT; PHT4NQ10LT,135; FQT7N10L;
Introduction Date: April 02, 2002
ECCN: EAR99
Country of Origin: China, Germany
Estimated EOL Date: 2025
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
POWER FIELD-EFFECT TRANSISTOR, 2.4A I(D), 100V, 0.35OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOT-223, 4 PIN. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 100V 1.7A SOT223
MOSFET N-CH 100V 1.7A SOT223
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Radwell International | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | ZXMN10A11GCT-ND | 278-ZXMN10A11GTA | 036950-ZXMN10A11GTA | 177188541 | ZXMN10A11GTA | ZXMN10A11GTA | ZXMN10A11GTA |
| Product Name | Single FETs, MOSFETs | 100V 1.7A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN10A11GTA | Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | |||
| Package Type | SOT223; TO-261-4, TO-261AA | Tape & Reel (TR) | SOT3; SOT-223 | SOT223; TO-261-4, TO-261AA | 274 pF @ 50 V | ||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | ||||
| Transconductance | 0.0040 kS |
