The ZXMN10A08E6TA is a 100V N-channel enhancement mode MOSFET designed for high-efficiency power management applications. It features a maximum on-resistance of 250m,Ѷ at a gate-source voltage of 10V and a continuous drain current rating of 1.9A at 25¬8C. The device is fully RoHS compliant and halogen-free, making it suitable for environmentally conscious designs. It is qualified to AEC-Q101 standards, indicating high reliability for automotive applications. The MOSFET is housed in a SOT-26 package, which is compact and suitable for surface mount technology. It operates over a temperature range of -55¬8C to +150¬8C, providing versatility in various environments. The device exhibits fast switching speeds and low gate charge, with a maximum gate charge of 7.7nC at 10V. This makes it ideal for applications such as DC-DC converters, power management functions, disconnect switches, and motor control. Engineers considering this part should note its mechanical and thermal characteristics, including a power dissipation capability of 1.1W and a thermal resistance of 114¬8C/W from junction to ambient. The ZXMN10A08E6TA is a reliable choice for applications requiring efficient switching and power management.
Manufacturer: Diodes Incorporated
Win Source Part Number: 036947-ZXMN10A08E6TA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.1W (Ta)
Family Name: ZXMN10A08E6
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-26
Dimension: SOT-23-6
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1.5A (Ta)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 7.7nC @ 10V
Max Input Capacitance: 405pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 250 mOhm @ 3.2A, 10V
Alternative Parts (Cross-Reference): ZXMN10A08E6; ZXMN10A08E6TC;
Introduction Date: April 02, 2002
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 100V 1.5A SOT26 Product overview: ZXMN10A08E6TA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN10A08E6TA can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 1.5A SOT26
N-Channel 100V 1.5A (Ta) 1.1W (Ta) Surface Mount SOT-26
N-Channel 100V 1.5A (Ta) 1.1W (Ta) Surface Mount SOT-26
N-Channel 100V 1.5A (Ta) 1.1W (Ta) Surface Mount SOT-26
MOSFET N-CH 100V 1.5A SOT26
MOSFET, N-CH, 100V, 1.5A, SOT-26 ROHS COMPLIANT: YES
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 036947-ZXMN10A08E6TA | 278-ZXMN10A08E6TA | ZXMN10A08E6TA | ZXMN10A08E6TR-ND | ZXMN10A08E6TA | ZXMN10A08E6TA | 29AK9156 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN10A08E6TA | 100V 1.5A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 100V, 1.5A, Sot-26 Rohs Compliant Diodes Inc. |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | ||||
| PD | 1100 milliwatts | 1.1 milliwatts | 1100 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; SOT23; SOT26; SOT-26 | Tape & Reel (TR) | SOT23; SOT26; SOT-23-6 | SOT23; SOT26; SOT-23-6 | SOT23; SOT-23-6 | TO-3; SOT26 |
