DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN10A08DN8TC ZXMN10A08DN8TC

Manufacturer: Diodes Incorporated
Win Source Part Number: 1120383-ZXMN10A08DN8TC
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOP
Maximum Power Dissipation: 1.25W
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1.6A
Gate-Source Threshold Voltage: 2V @ 250μA (Min)
Max Gate Charge: 7.7nC @ 10V
Max Input Capacitance: 405pF @ 50V
Maximum Rds On at Id,Vgs: 250 mOhm @ 3.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient

Mosfet Array 2 N-Channel (Dual) 100V 1.6A 1.25W Surface Mount 8-SO

MOSFET 2N-CH 100V 1.6A 8SO Product overview: ZXMN10A08DN8TC from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1.6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-ZXMN10A08DN8TC can be used for catalog matching and distributor lookup.