MOSFET 2N-CH 100V 1.6A 8SO Product overview: ZXMN10A08DN8TA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1.6A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-ZXMN10A08DN8TA can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 100V 1.6A 1.25W Surface Mount 8-SO
Mosfet Array 2 N-Channel (Dual) 100V 1.6A 1.25W Surface Mount 8-SO
Mosfet Array 2 N-Channel (Dual) 100V 1.6A 1.25W Surface Mount 8-SO
MOSFET 2N-CH 100V 1.6A 8-SOIC
Manufacturer: Diodes Incorporated
Win Source Part Number: 036946-ZXMN10A08DN8T
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: ZXMN10A08DN8
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOP
Maximum Power Dissipation: 1.25W
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1.6A
Gate-Source Threshold Voltage: 2V @ 250μA (Min)
Max Gate Charge: 7.7nC @ 10V
Max Input Capacitance: 405pF @ 50V
Maximum Rds On at Id,Vgs: 250 mOhm @ 3.2A, 10V
Alternative Parts (Cross-Reference): AP5322GM-HF; SH8K52GZETB; SP8K52FRATB; ZXMN10A08DN8TC;
Introduction Date: September 16, 2004
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance
MOSFET ARRAY, 100V, 1.6 AMP, 1.25W, SURFACE MOUNT, 8-SOIC, 0.154", 3.90MM WIDTH. FREE 2 YEAR RADWELL WARRANTY
Trans MOSFET N-CH 100V 2.1A 8-Pin SOIC T/R
MOSFET, N-CH, 100V, 2.1A, SOIC ROHS COMPLIANT: YES
MOSFET 2N-CH 100V 1.6A 8SO
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Radwell International | Utmel Electronic Limited | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 289-ZXMN10A08DN8TA | ZXMN10A08DN8TADKR-ND | ZXMN10A08DN8TA | 036946-ZXMN10A08DN8TA | 62429434 | 233-ZXMN10A08DN8TA | 29AK9155 | ZXMN10A08DN8TA |
| Product Name | 100V 1.6A MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN10A08DN8TA | Transistor | Trans MOSFET N-CH 100V 2.1A 8-Pin SOIC T/R | Mosfet, N-Ch, 100V, 2.1A, Soic Rohs Compliant Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | |||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | ||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | 100 volts | ||||
| PD | 1.8 milliwatts | 1250 milliwatts | 1800 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
