DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMN0545G4TA ZXMN0545G4TA

Manufacturer: Diodes Incorporated
Win Source Part Number: 036943-ZXMN0545G4TA
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-223
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 450V
Continuous Drain Current at 25°C: 140mA (Ta)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Input Capacitance: 70pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 50 Ohm @ 100mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited

MOSFET N-CH 450V 140MA SOT-223 Product overview: ZXMN0545G4TA from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 450V, 140MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 450V, 140MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-ZXMN0545G4TA can be used for catalog matching and distributor lookup.