MOSFET 2N/2P-CH 60V 8-SOIC Product overview: ZXMHC6A07N8TC from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, SOIC, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-ZXMHC6A07N8TC can be used for catalog matching and distributor lookup.
Manufacturer: Diodes Incorporated
Win Source Part Number: 092014-ZXMHC6A07N8TC
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N and 2 P-Channel (H-Bridge)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOP
Maximum Power Dissipation: 870mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 1.39A, 1.28A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 3.2nC @ 10V
Max Input Capacitance: 166pF @ 40V
Maximum Rds On at Id,Vgs: 250 mOhm @ 1.8A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
Mosfet Array 2 N and 2 P-Channel (H-Bridge) 60V 1.39A, 1.28A 870mW Surface Mount 8-SO
Mosfet Array 2 N and 2 P-Channel (H-Bridge) 60V 1.39A, 1.28A 870mW Surface Mount 8-SO
Mosfet Array 2 N and 2 P-Channel (H-Bridge) 60V 1.39A, 1.28A 870mW Surface Mount 8-SO
MOSFET 2N/2P-CH 60V 8-SOIC
MOSFET, P/N-CH, 60V, 1.39A ROHS COMPLIANT: YES
MOSFET Mosfet H-Bridge 60/-60V 1.8/-1.4A
MOSFET 2N/2P-CH 60V 8-SOIC
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-ZXMHC6A07N8TC | 092014-ZXMHC6A07N8TC | ZXMHC6A07N8DIDKR-ND | ZXMHC6A07N8TC | 29AK9153 | ZXMHC6A07N8TC | ZXMHC6A07N8TC |
| Product Name | 60V SOIC MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMHC6A07N8TC | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P/n-Ch, 60V, 1.39A Rohs Compliant Diodes Inc. | MOSFET | FET, MOSFET Arrays |
| Polarity | N-Channel; P-Channel | P-Channel | P-Channel; 2 N and 2 P-Channel (Full Bridge) | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | ||||
| Transconductance | 0.0023 to 0.0018 kS | ||||||
| PD | 870 milliwatts | 870 milliwatts |
