Manufacturer: Diodes Incorporated
Win Source Part Number: 044168-ZXMHC3F381N8T
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N and 2 P-Channel (H-Bridge)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOP
Maximum Power Dissipation: 870mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 3.98A, 3.36A
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 9nC @ 10V
Max Input Capacitance: 430pF @ 15V
Maximum Rds On at Id,Vgs: 33 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Application Field: Used in Audio, Industrial
MOSFET 2N/2P-CH 30V 3.98A 8SO Product overview: ZXMHC3F381N8TC from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 3.98A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 3.98A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-ZXMHC3F381N8TC can be used for catalog matching and distributor lookup.
Mosfet Array 2 N and 2 P-Channel (H-Bridge) 30V 3.98A, 3.36A 870mW Surface Mount 8-SO
Mosfet Array 2 N and 2 P-Channel (H-Bridge) 30V 3.98A, 3.36A 870mW Surface Mount 8-SO
Mosfet Array 2 N and 2 P-Channel (H-Bridge) 30V 3.98A, 3.36A 870mW Surface Mount 8-SO
MOSFET 2N/2P-CH 30V 8-SOIC
MOSFET, COMP, H-BRIDE, 30V, SO8; Transistor Polarity:Complementa
MOSFET 2N/2P-CH 30V 3.98A 8SO
30V 33mΩ@5A,10V 870mW 3V@250uA 2PCSNChannel&2PCSPCh
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 044168-ZXMHC3F381N8TC | 289-ZXMHC3F381N8TC | ZXMHC3F381N8DICT-ND | ZXMHC3F381N8TC | ZXMHC3F381N8TC | 65T9553 | ZXMHC3F381N8TC | ZXMHC3F381N8TC |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMHC3F381N8TC | 30V 3.98A MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | MOSFET | Mosfet, Comp, H-Bride, 30V, So8; Transistor Polarity Diodes Inc. | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs |
| Polarity | P-Channel | N-Channel; P-Channel | P-Channel; 2 N and 2 P-Channel (Full Bridge) | |||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts | 30 volts | ||||
| PD | 870 milliwatts | 870 milliwatts | 870 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3; 8-SOP | Tape & Reel (TR) | "8-SOIC (0.154"", 3.90mm Width)" | 8-SOIC (0.154", 3.90mm Width) | TO-3 |
