MOSFET 2N/2P-CH 100V 0.8A 8SO Product overview: ZXMHC10A07N8TC from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 0.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 0.8A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-ZXMHC10A07N8TC can be used for catalog matching and distributor lookup.
Mosfet Array 2 N and 2 P-Channel (H-Bridge) 100V 800mA, 680mA 870mW Surface Mount 8-SO
Mosfet Array 2 N and 2 P-Channel (H-Bridge) 100V 800mA, 680mA 870mW Surface Mount 8-SO
Mosfet Array 2 N and 2 P-Channel (H-Bridge) 100V 800mA, 680mA 870mW Surface Mount 8-SO
Manufacturer: Diodes Incorporated
Win Source Part Number: 044167-ZXMHC10A07N8T
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N and 2 P-Channel (H-Bridge)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-SOP
Maximum Power Dissipation: 870mW
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 800mA, 680mA
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 2.9nC @ 10V
Max Input Capacitance: 138pF @ 60V
Maximum Rds On at Id,Vgs: 700 mOhm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
MOSFET Mosfet H-Bridge 100/-100 1.1/-0.9
MOSFET 2N/2P-CH 100V 0.8A 8SO
MOSFET, DUAL, N/P-CH, 100V, 0.8A ROHS COMPLIANT: YES
ZXMHC10A07N8TC Series 100 V 1 O Dual N & P Ch Enhancement Mode MOSFET - SOIC-8
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 289-ZXMHC10A07N8TC | ZXMHC10A07N8DICT-ND | 044167-ZXMHC10A07N8TC | ZXMHC10A07N8TC | ZXMHC10A07N8TC | 29AK9150 | 233-ZXMHC10A07N8TC |
| Product Name | 100V 0.8A MOSFET Transistor | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMHC10A07N8TC | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual, N/p-Ch, 100V, 0.8A Rohs Compliant Diodes Inc. | ZXMHC10A07N8TC Series 100 V 1 O Dual N & P Ch Enhancement Mode MOSFET - SOIC-8 |
| Polarity | N-Channel; P-Channel | P-Channel | N-Channel; P-Channel; N-CHANNEL AND P-CHANNEL | ||||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | |||||
| V(BR)DSS | 100 volts | 100 volts | -100 volts | ||||
| Transconductance | 0.0016 to 0.0012 kS | ||||||
| PD | 870 milliwatts | 870 milliwatts | 1360 milliwatts |
