DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMD65P02N8TA ZXMD65P02N8TA

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1120379-ZXMD65P02N8T A Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Standard Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: 8-SOP Maximum Power Dissipation: 1.75W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4A Gate-Source Threshold Voltage: 700mV @ 250μA (Min) Max Gate Charge: 20nC @ 4.5V Max Input Capacitance: 960pF @ 15V Maximum Rds On at Id,Vgs: 50 mOhm @ 2.9A, 4.5V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Diodes Incorporated Win Source Part Number: 1120379-ZXMD65P02N8T A Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Standard Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: 8-SOP Maximum Power Dissipation: 1.75W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4A Gate-Source Threshold Voltage: 700mV @ 250μA (Min) Max Gate Charge: 20nC @ 4.5V Max Input Capacitance: 960pF @ 15V Maximum Rds On at Id,Vgs: 50 mOhm @ 2.9A, 4.5V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMD65P02N8TA - 1120379-ZXMD65P02N8TA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMD65P02N8TA
1120379-ZXMD65P02N8TA
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMD65P02N8TA 1120379-ZXMD65P02N8TA
Manufacturer: Diodes Incorporated Win Source Part Number: 1120379-ZXMD65P02N8T A Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Standard Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: 8-SOP Maximum Power Dissipation: 1.75W Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4A Gate-Source Threshold Voltage: 700mV @ 250μA (Min) Max Gate Charge: 20nC @ 4.5V Max Input Capacitance: 960pF @ 15V Maximum Rds On at Id,Vgs: 50 mOhm @ 2.9A, 4.5V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance

Manufacturer: Diodes Incorporated
Win Source Part Number: 1120379-ZXMD65P02N8TA
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: 8-SOP
Maximum Power Dissipation: 1.75W
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4A
Gate-Source Threshold Voltage: 700mV @ 250μA (Min)
Max Gate Charge: 20nC @ 4.5V
Max Input Capacitance: 960pF @ 15V
Maximum Rds On at Id,Vgs: 50 mOhm @ 2.9A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1120379-ZXMD65P02N8TA
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMD65P02N8TA
Polarity P-Channel
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