DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMD63P03XTC ZXMD63P03XTC

Manufacturer: Diodes Incorporated
Win Source Part Number: 1120378-ZXMD63P03XTC
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-MSOP
Maximum Power Dissipation: 1.04W
Drain-Source Breakdown Voltage: 30V
Gate-Source Threshold Voltage: 1V @ 250μA (Min)
Max Gate Charge: 7nC @ 10V
Max Input Capacitance: 270pF @ 25V
Maximum Rds On at Id,Vgs: 185 mOhm @ 1.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance
Quantity per package: 4k pcs

Mosfet Array 2 P-Channel (Dual) 30V 1.04W Surface Mount 8-MSOP

MOSFET 2P-CH 30V 8MSOP Product overview: ZXMD63P03XTC from Diodes Incorporated is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-ZXMD63P03XTC can be used for catalog matching and distributor lookup.