DIODES Incorporated FET, MOSFET Arrays ZXMD63P02XTA

Description
Mosfet Array 2 P-Channel (Dual) 20V 1.04W Surface Mount 8-MSOP
Request a Quote Datasheet
Description
Mosfet Array 2 P-Channel (Dual) 20V 1.04W Surface Mount 8-MSOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - ZXMD63P02XTATR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
ZXMD63P02XTATR-ND
FET, MOSFET Arrays ZXMD63P02XTATR-ND
Mosfet Array 2 P-Channel (Dual) 20V 1.04W Surface Mount 8-MSOP

Mosfet Array 2 P-Channel (Dual) 20V 1.04W Surface Mount 8-MSOP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMD63P02XTA - 1120376-ZXMD63P02XTA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMD63P02XTA
1120376-ZXMD63P02XTA
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMD63P02XTA 1120376-ZXMD63P02XTA
Manufacturer: Diodes Incorporated Win Source Part Number: 1120376-ZXMD63P02XTA Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-MSOP Maximum Power Dissipation: 1.04W Drain-Source Breakdown Voltage: 20V Gate-Source Threshold Voltage: 700mV @ 250μA (Min) Max Gate Charge: 5.25nC @ 4.5V Max Input Capacitance: 290pF @ 15V Maximum Rds On at Id,Vgs: 270 mOhm @ 1.2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Diodes Incorporated
Win Source Part Number: 1120376-ZXMD63P02XTA
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-MSOP
Maximum Power Dissipation: 1.04W
Drain-Source Breakdown Voltage: 20V
Gate-Source Threshold Voltage: 700mV @ 250μA (Min)
Max Gate Charge: 5.25nC @ 4.5V
Max Input Capacitance: 290pF @ 15V
Maximum Rds On at Id,Vgs: 270 mOhm @ 1.2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZXMD63P02XTA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ZXMD63P02XTA
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ZXMD63P02XTA
MOSFET 2P-CH 20V 8MSOP

MOSFET 2P-CH 20V 8MSOP

Supplier's Site
FET, MOSFET Arrays - ZXMD63P02XTA - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
ZXMD63P02XTA
FET, MOSFET Arrays ZXMD63P02XTA
MOSFET 2P-CH 20V 8-MSOP

MOSFET 2P-CH 20V 8-MSOP

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number ZXMD63P02XTATR-ND 1120376-ZXMD63P02XTA ZXMD63P02XTA ZXMD63P02XTA
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMD63P02XTA Discrete Semiconductor Products - Transistors - FETs, MOSFETs FET, MOSFET Arrays
Package Type "8-TSSOP, 8-MSOP (0.118"", 3.00mm Width)" SOT3; 8-MSOP 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Polarity P-Channel P-Channel; 2 P-Channel (Dual)
V(BR)DSS 20 volts 20 volts
PD 1040 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

DC - 3.5 GHz, 45 Watt, 32 V GaN RF Power Transistor - T1G4004532-FL - Qorvo
Specs
Transistor Technology / Material GaN
Package Type NI-360
Power Gain 19 dB
View Details
GaAs Fet Switches - KCB817 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 6000 MHz
View Details