DIODES Incorporated FET, MOSFET Arrays ZXMD63P02XTA

Description
MOSFET 2P-CH 20V 8-MSOP
Request a Quote Datasheet
Description
MOSFET 2P-CH 20V 8-MSOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - ZXMD63P02XTA - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
ZXMD63P02XTA
FET, MOSFET Arrays ZXMD63P02XTA
MOSFET 2P-CH 20V 8-MSOP

MOSFET 2P-CH 20V 8-MSOP

Supplier's Site Datasheet
FET, MOSFET Arrays - ZXMD63P02XTATR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
ZXMD63P02XTATR-ND
FET, MOSFET Arrays ZXMD63P02XTATR-ND
Mosfet Array 2 P-Channel (Dual) 20V 1.04W Surface Mount 8-MSOP

Mosfet Array 2 P-Channel (Dual) 20V 1.04W Surface Mount 8-MSOP

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMD63P02XTA - 1120376-ZXMD63P02XTA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMD63P02XTA
1120376-ZXMD63P02XTA
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMD63P02XTA 1120376-ZXMD63P02XTA
Manufacturer: Diodes Incorporated Win Source Part Number: 1120376-ZXMD63P02XTA Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-MSOP Maximum Power Dissipation: 1.04W Drain-Source Breakdown Voltage: 20V Gate-Source Threshold Voltage: 700mV @ 250μA (Min) Max Gate Charge: 5.25nC @ 4.5V Max Input Capacitance: 290pF @ 15V Maximum Rds On at Id,Vgs: 270 mOhm @ 1.2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Diodes Incorporated
Win Source Part Number: 1120376-ZXMD63P02XTA
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-MSOP
Maximum Power Dissipation: 1.04W
Drain-Source Breakdown Voltage: 20V
Gate-Source Threshold Voltage: 700mV @ 250μA (Min)
Max Gate Charge: 5.25nC @ 4.5V
Max Input Capacitance: 290pF @ 15V
Maximum Rds On at Id,Vgs: 270 mOhm @ 1.2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZXMD63P02XTA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ZXMD63P02XTA
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ZXMD63P02XTA
MOSFET 2P-CH 20V 8MSOP

MOSFET 2P-CH 20V 8MSOP

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number ZXMD63P02XTA ZXMD63P02XTATR-ND 1120376-ZXMD63P02XTA ZXMD63P02XTA
Product Name FET, MOSFET Arrays FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMD63P02XTA Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; 2 P-Channel (Dual) P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts 20 volts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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