DIODES Incorporated TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMD63C03XTA ZXMD63C03XTA

Description
Manufacturer: Diodes Incorporated Win Source Part Number: 036934-ZXMD63C03XTA Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Family Name: ZXMD63C03X Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-MSOP Maximum Power Dissipation: 1.04W Drain-Source Breakdown Voltage: 30V Gate-Source Threshold Voltage: 1V @ 250μA (Min) Max Gate Charge: 8nC @ 10V Max Input Capacitance: 290pF @ 25V Maximum Rds On at Id,Vgs: 135 mOhm @ 1.7A, 10V Alternative Parts (Cross-Reference): IRF7509TRPBF; IRF7509PBF; IRF7509TR; IRF7509; Introduction Date: July 22, 1999 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Sufficient Quantity per package: 1k pcs
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMD63C03XTA - 036934-ZXMD63C03XTA - Win Source Electronics
    Win Source Electronics
  • FET, MOSFET Arrays - ZXMD63C03XTR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZXMD63C03XTA - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Diodes Incorporated Win Source Part Number: 036934-ZXMD63C03XTA Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Family Name: ZXMD63C03X Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-MSOP Maximum Power Dissipation: 1.04W Drain-Source Breakdown Voltage: 30V Gate-Source Threshold Voltage: 1V @ 250μA (Min) Max Gate Charge: 8nC @ 10V Max Input Capacitance: 290pF @ 25V Maximum Rds On at Id,Vgs: 135 mOhm @ 1.7A, 10V Alternative Parts (Cross-Reference): IRF7509TRPBF; IRF7509PBF; IRF7509TR; IRF7509; Introduction Date: July 22, 1999 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Sufficient Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMD63C03XTA - 036934-ZXMD63C03XTA - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMD63C03XTA
036934-ZXMD63C03XTA
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMD63C03XTA 036934-ZXMD63C03XTA
Manufacturer: Diodes Incorporated Win Source Part Number: 036934-ZXMD63C03XTA Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Family Name: ZXMD63C03X Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 8-MSOP Maximum Power Dissipation: 1.04W Drain-Source Breakdown Voltage: 30V Gate-Source Threshold Voltage: 1V @ 250μA (Min) Max Gate Charge: 8nC @ 10V Max Input Capacitance: 290pF @ 25V Maximum Rds On at Id,Vgs: 135 mOhm @ 1.7A, 10V Alternative Parts (Cross-Reference): IRF7509TRPBF; IRF7509PBF; IRF7509TR; IRF7509; Introduction Date: July 22, 1999 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Sufficient Quantity per package: 1k pcs

Manufacturer: Diodes Incorporated
Win Source Part Number: 036934-ZXMD63C03XTA
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: ZXMD63C03X
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 8-MSOP
Maximum Power Dissipation: 1.04W
Drain-Source Breakdown Voltage: 30V
Gate-Source Threshold Voltage: 1V @ 250μA (Min)
Max Gate Charge: 8nC @ 10V
Max Input Capacitance: 290pF @ 25V
Maximum Rds On at Id,Vgs: 135 mOhm @ 1.7A, 10V
Alternative Parts (Cross-Reference): IRF7509TRPBF; IRF7509PBF; IRF7509TR; IRF7509;
Introduction Date: July 22, 1999
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Sufficient
Quantity per package: 1k pcs

Buy Now Datasheet
FET, MOSFET Arrays - ZXMD63C03XTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
ZXMD63C03XTR-ND
FET, MOSFET Arrays ZXMD63C03XTR-ND
Mosfet Array N and P-Channel 30V 1.04W Surface Mount 8-MSOP

Mosfet Array N and P-Channel 30V 1.04W Surface Mount 8-MSOP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ZXMD63C03XTA - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ZXMD63C03XTA
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ZXMD63C03XTA
MOSFET N/P-CH 30V 8MSOP

MOSFET N/P-CH 30V 8MSOP

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 036934-ZXMD63C03XTA ZXMD63C03XTR-ND ZXMD63C03XTA
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - ZXMD63C03XTA FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel
V(BR)DSS 30 volts
PD 1040 milliwatts
Unlock Full Specs
to access all available technical data